QPD1009 & QPD1010 GaN RF Transistors

Qorvo QPD1009 and QPD1010 GaN RF Transistors are discrete GaN on SiC HEMTs which operate from DC to 4GHz and are constructed with Qorvo's proven QGaN25HV process. This process features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization is potentially cost effective in terms of fewer amplifier line-ups and lower thermal management costs.