IRLHS6242TRPBF

Infineon Technologies
942-IRLHS6242TRPBF
IRLHS6242TRPBF

製造商：

說明：
MOSFET 20V 1 N-CH HEXFET 11.7mOhms 14nC

規格書:
ECAD模型:
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庫存量: 342

庫存：
342
可立即送貨
在途量:
12,000
預期2026/11/26
12,000
預期2026/12/14
工廠前置作業時間：
26
週 工廠預計生產時間數量大於所顯示的數量。
此產品已報告長備貨期。
最少： 1   多個： 1
單價:
NT$-.--
總價:
NT$-.--
估計關稅:
包裝:
完整捲（訂購多個4000）

Pricing (TWD)

數量 單價
總價
零卷 / MouseReel™ †
NT$28.68 NT$28.68
NT$18.53 NT$185.30
NT$13.34 NT$1,334.00
NT$9.57 NT$4,785.00
NT$8.28 NT$8,280.00
NT$7.46 NT$14,920.00
完整捲（訂購多個4000）
NT$5.56 NT$22,240.00
† NT$215.00 MouseReel™費用將加入您的購物車內並自動計算。所有MouseReel™訂單均不能取消和不能退換。 ↩

商品屬性 屬性值 選擇屬性
Infineon
產品類型: MOSFET
RoHS:  
Si
SMD/SMT
PQFN 2x2 (DFN2020)
N-Channel
1 Channel
20 V
22 A
11.7 mOhms
- 12 V, 12 V
1.1 V
14 nC
- 55 C
+ 150 C
9.6 W
Enhancement
StrongIRFET
Reel
Cut Tape
MouseReel
品牌: Infineon Technologies
配置: Single
下降時間: 13 ns
互導 - 最小值: 36 S
產品類型: MOSFETs
上升時間: 15 ns
系列: N-Channel
原廠包裝數量: 4000
子類別: Transistors
晶體管類型: 1 N-Channel
標準斷開延遲時間: 19 ns
標準開啟延遲時間: 5.8 ns
每件重量: 10.430 mg
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所選屬性: 0

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合規守則
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99
原產地分類
原產國:
中國台灣
封裝原產國:
中國
擴散國:
英國
出貨時，國家可能會有所變更。

無線充電解決方案

英飛凌無線充電解決方案符合當今持續成長的無線充電應用需求，例如：智慧型手機、穿戴式裝置、筆電及低電壓驅動裝置。英飛凌的高效率、高成本效益裝置，為發射器單元提供最先進的解決方案，以符合電感與諧振標準。英飛凌裝置可立即用於變壓器/充電器，加快完整無線充電解決方案的上市速度。英飛凌為無線充電聯盟 (Wireless Power Consortium) 與AirFuel聯盟的成員。  

Power MOSFETs

Infineon pioneered HEXFET power MOSFET technology, developing and introducing the first hexagonal topology MOSFETs in 1979. These developments were granted a broad patent just four years later, and since that time, most MOSFET manufacturers have licensed the designs and processes to enter this marketplace. IR products exhibit the lowest MOSFET on-resistance available on the market for similar components in their class, enabling power conversion subsystem designs that exhibit unequaled efficiency. IR combines state-of-the-art silicon technology with innovative packaging technology. IR POWIRTAB™, Super-220™, and Super-247™ packages allow up to 20A more current per device in the same footprint than standard packages, increasing power density. Compatible with standard surface-mount soldering techniques, IR's FlipFET® packaging technology offers a 100% silicon-to-footprint ratio with the same performance as a conventional package three times as big, making it the ideal solution for portable devices such as phones or notebook PCs. IR's DirectFET® packaging revolutionizes thermal management in the footprint of a standard SO-8 by drawing heat away from the board through the top of the package. As a result, DirectFET MOSFETs can double the current density while cutting thermal management costs in half in high-current circuits that power next-generation microprocessors.

Ultra Compact PQFN HEXFET® Power MOSFETs

Infineon Ultra Compact PQFN HEXFET® Power MOSFETs deliver an ultra-compact, high density and efficient solution for a wide variety of lower power applications including smartphones, tablet PCs, camcorders, digital still cameras, notebook PC, server and network communications equipment. 

Inductive Wireless Charging Solutions

Infineon Technologies Inductive Wireless Charging Solutions use electromagnetic fields to transfer power from a transmitter to a receiver application. This technology charges batteries without a physical connection, all thanks to a wireless charging power supply. The benefits of wireless charging in applications are not having to plug in a device and no plug compatibility issues. It’s also safer since there is no contact with exposed electrical connectors. Wireless charging is more reliable in harsher environments, like drilling and mining. It also allows for seamless on-the-go charging, whether in the car or in public places. Finally, it eliminates tangled charging cables while charging multiple devices in parallel.

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