NDSH20120C-F155

onsemi
863-NDSH20120C-F155
NDSH20120C-F155

製造商：

說明：
碳化矽肖特基二極管 SIC DIODE GEN2.0 1200V TO

規格書:
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庫存量: 593

庫存：
593 可立即送貨
工廠前置作業時間：
12 週 工廠預計生產時間數量大於所顯示的數量。
最少： 1   多個： 1
單價:
NT$-.--
總價:
NT$-.--
估計關稅:

Pricing (TWD)

數量 單價
總價
NT$317.56 NT$317.56
NT$217.94 NT$2,179.40
NT$163.88 NT$16,388.00

商品屬性 屬性值 選擇屬性
onsemi
產品類型: 碳化矽肖特基二極管
RoHS:  
REACH - SVHC:
Through Hole
TO-247-2
Single
26 A
1.2 kV
1.75 V
119 A
2.06 uA
- 55 C
+ 175 C
NDSH20120C-F155
Tube
品牌: onsemi
Pd - 功率消耗 : 214 W
產品類型: SiC Schottky Diodes
原廠包裝數量: 450
子類別: Diodes & Rectifiers
公司名稱: EliteSiC
Vr - 反向電壓: 1.2 kV
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所選屬性: 0

規格書

CNHTS:
8541100000
CAHTS:
8541100090
USHTS:
8541100080
TARIC:
8541100000
ECCN:
EAR99

D3 EliteSiC Diodes

onsemi D3 EliteSiC Diodes are a solution for applications requiring high-power PFC and output rectification. The onsemi D3 has a maximum voltage rating of 1200V. These diodes come in two package options, TO-247-2LD and TO-247-3LD, providing flexibility for various designs. The D3 EliteSiC Diodes are optimized for high-temperature operation with low series-resistance temperature dependency, ensuring consistent and reliable performance even under extreme conditions.

NDSH20120C-F155 Silicon Carbide Schottky Diode

onsemi NDSH20120C-F155 Silicon Carbide (SiC) Schottky Diode provides superior switching performance and higher reliability compared to Silicon. NDSH20120C-F155 features no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance. System benefits include high efficiency, fast operating frequency, increased power density, reduced EMI, and reduced system size and cost. This EliteSiC diode offers a positive temperature coefficient and ease of paralleling.

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