Semi Power MOSFETs

Toshiba Semi Power MOSFETs are designed with advanced technologies, achieving low RON characteristics. The Semi Power MOSFETs are very compact and thin at 2 x 2mm and 2.9 x 2.8mm, offering the low loss and compact size MOSFETs required for battery-powered devices such as smartphones and wearable devices.

結果: 10
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (TWD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 技術 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式 資格 公司名稱 封裝
Toshiba MOSFET LowON Res MOSFET ID=6A VDSS=100V 590,951庫存量
最少: 1
倍數: 1
: 3,000

Si SMD/SMT UDFN-6 N-Channel 1 Channel 60 V 6 A 28 mOhms - 20 V, 20 V 1.5 V 9.3 nC - 55 C + 150 C 1.25 W Enhancement U-MOSVIII-H Reel, Cut Tape, MouseReel
Toshiba MOSFET SM Sig N-CH MOS 30V 6A 20V VGSS 72,941庫存量
最少: 1
倍數: 1
: 3,000

Si N-Channel 1 Channel AEC-Q100 U-MOSVII-H Reel, Cut Tape, MouseReel
Toshiba MOSFET LowON Res MOSFET ID=4A VDSS=20V 49,519庫存量
最少: 1
倍數: 1
: 3,000

Si SMD/SMT SOT-23F-3 N-Channel 1 Channel 20 V 4 A 25 mOhms - 8 V, 8 V 400 mV 3.6 nC - 55 C + 150 C 2 W Enhancement U-MOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFET Small Signal MOSFET V=30V, I-10A 19,096庫存量
最少: 1
倍數: 1
: 3,000

Si SMD/SMT UDFN-6 P-Channel 1 Channel 30 V 10 A 20 mOhms - 25 V, 20 V 1 V 13.6 nC - 55 C + 150 C 2.5 W Enhancement U-MOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFET Small Low ON Resistane MOSFET 19,545庫存量
最少: 1
倍數: 1
: 3,000

Si SMD/SMT UDFN-6 N-Channel 1 Channel 30 V 15 A 6.5 mOhms - 20 V, 20 V 1.1 V 7.5 nC - 55 C + 150 C 2.5 W Enhancement U-MOSIX-H Reel, Cut Tape, MouseReel
Toshiba MOSFET LowON Res MOSFET ID=4A VDSS=30V 30,335庫存量
117,000在途量
最少: 1
倍數: 1
: 3,000

Si SMD/SMT UDFN-6 N-Channel 2 Channel 30 V 4 A 39.1 mOhms - 8 V, 12 V 400 mV 3.2 nC - 55 C + 150 C 1 W Enhancement AEC-Q101 U-MOSVII-H Reel, Cut Tape, MouseReel
Toshiba MOSFET Small Signal MOSFET P-ch Vdss:-20V Vgss:-8/+6V Id:-6A 5,790庫存量
最少: 1
倍數: 1
: 3,000

Si SMD/SMT SOT-23F-3 P-Channel 1 Channel 20 V 6 A 29.8 mOhms - 8 V, 6 V 1 V 12.8 nC + 150 C 2 W Enhancement AEC-Q101 U-MOSVI Reel, Cut Tape, MouseReel
Toshiba MOSFET LowON Res MOSFET ID=3.5A VDSS=100V
123,000預期2026/3/6
最少: 1
倍數: 1
: 3,000

Si SMD/SMT UDFN-6 N-Channel 1 Channel 100 V 3.5 A 51 mOhms - 20 V, 20 V 1.5 V 3.2 nC - 55 C + 150 C 1.25 W Enhancement U-MOSVIII-H Reel, Cut Tape, MouseReel
Toshiba MOSFET Small-signal MOSFET Power MGMT switch
17,054預期2026/2/13
最少: 1
倍數: 1
: 3,000

Si SMD/SMT UDFN-6 P-Channel 1 Channel 12 V 14 A 6.5 mOhms - 10 V, 10 V 1 V 47 nC - 55 C + 150 C 1.25 W Enhancement U-MOSVII Reel, Cut Tape, MouseReel
Toshiba MOSFET Small Low ON Resistane MOSFET
5,994預期2026/2/16
最少: 1
倍數: 1
: 3,000

Si SMD/SMT UDFN-6 N-Channel 1 Channel 40 V 12 A 8.9 mOhms - 20 V, 20 V 1.4 V 7.5 nC - 55 C + 150 C 1.25 W Enhancement U-MOSIX-H Reel, Cut Tape, MouseReel