STGWA100H65DFB2

STMicroelectronics
511-STGWA100H65DFB2
STGWA100H65DFB2

製造商:

說明:
IGBT Trench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT in a TO-247 lon

ECAD模型:
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庫存量: 1,000

庫存:
1,000 可立即送貨
工廠前置作業時間:
14 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
NT$-.--
總價:
NT$-.--
估計關稅:

Pricing (TWD)

數量 單價
總價
NT$176.80 NT$176.80
NT$108.80 NT$1,088.00
NT$96.22 NT$9,622.00
NT$95.88 NT$57,528.00
NT$95.20 NT$114,240.00
5,400 報價

商品屬性 屬性值 選擇屬性
STMicroelectronics
產品類型: IGBT
RoHS:  
TO-247-3
Through Hole
Single
650 V
1.55 V
- 20 V, 20 V
145 A
441 W
- 55 C
+ 175 C
Tube
品牌: STMicroelectronics
柵射極漏電電流: 250 nA
產品類型: IGBT Transistors
原廠包裝數量: 600
子類別: IGBTs
每件重量: 6.100 g
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所選屬性: 0

CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

STGWA100H65DFB2 HB2 IGBT

STMicroelectronics STGWA100H65DFB2 HB2 IGBT is an evolution of the advanced proprietary trench gate field-stop structure. The HB2 series optimizes conduction with premium VCE(sat) at low current values and reduced switching energy. The STGWA100H65DFB2 HB2 IGBT features a low VCE(sat) of 1.55V (typical) at an IC of 100A.