MDmesh DK5 MOSFETs

STMicroelectronics MDmesh DK5 MOSFETs are very-high voltage fast recovery diodes with a 950V to 1050V breakdown voltage. The DK5 has a very low gate charge, as low as 45nC, and a reverse recovery time (trr) of 250ns (typ.). This makes the MDmesh DK5 ideal for ZVS LLC resonant converters in high-power applications. These applications include industrial welders, plasma generators, high-frequency induction melting/heating, and X-ray machines.

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說明 規格書 供貨情況 定價 (TWD) 基於數量按單價篩選表中結果。
數量 RoHS ECAD模型 技術
安裝風格
封裝/外殼
晶體管極性
通道數
Vds - 漏-源擊穿電壓
Id - C連續漏極電流
Rds On - 漏-源電阻
Vgs - 閘極-源極電壓
Vgs th - 門源門限電壓
Qg - 閘極充電
最低工作溫度
最高工作溫度
Pd - 功率消耗
通道模式
公司名稱
封裝

STMicroelectronics MOSFET N-channel 950 V, 0.120 Ohm typ., 38 A MDmesh DK5 Power MOSFET in a TO-247 long l
規格書
600庫存量
最少： 1
倍數： 1

Si Through Hole TO-247-3 N-Channel 1 Channel 950 V 38 A 120 mOhms - 30 V, 30 V 3 V 100 nC - 55 C + 150 C 450 W Enhancement MDmesh Tube

STMicroelectronics MOSFET N-channel 950 V, 0.120 Ohm typ., 38 A MDmesh DK5 Power MOSFET in a TO-247 packag
規格書
697庫存量
最少： 1
倍數： 1

Si Through Hole TO-247-3 N-Channel 1 Channel 950 V 38 A 120 mOhms - 30 V, 30 V 3 V 100 nC - 55 C + 150 C 450 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-channel 1050 V, 0.110 Ohm typ., 46 A MDmesh DK5 Power MOSFET in a Max247 packa
規格書
460庫存量
最少： 1
倍數： 1

Si Through Hole Max247-3 N-Channel 1 Channel 1.05 kV 44 A 100 mOhms - 30 V, 30 V 3 V 175 nC - 55 C + 150 C 625 W Enhancement MDmesh Tube