CGHV96100F2

Name: MACOM CGHV96100F2
Brand: MACOM
SKU: 941-CGHV96100F2
Price: 48158.62 TWD
Availability: OutOfStock

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Mouser 編號：

941-CGHV96100F2

製造商編號：

CGHV96100F2

製造商：

MACOM

說明：

氮化鎵場效應管 GaN HEMT 7.9-9.6GHz, 100 Watt

規格書:

CGHV96100F2 規格書 (PDF)

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工廠前置作業時間：: 26 週工廠預計生產時間。

此產品已報告長備貨期。

輸入數量：

最少： 1 多個： 1

單價:

NT$-.--

總價:

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Pricing (TWD)

數量	單價	總價
	NT$48,158.62	NT$48,158.62

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商品屬性	屬性值	選擇屬性
製造商:	MACOM
產品類型:	氮化鎵場效應管
付運限制：	此產品可能需要額外文件才能出口至美國境外。
RoHS:
安裝風格:	Screw Mount
封裝/外殼:	440210
晶體管極性:	N-Channel
Vds - 漏-源擊穿電壓:	100 V
Id - C連續漏極電流:	12 A
Vgs th - 門源門限電壓 :	- 3 V
最低工作溫度:	- 40 C
最高工作溫度:	+ 150 C
品牌:	MACOM
配置:	Single
開發套件:	CGHV96100F2-TB
增益:	12.4 dB
最大工作頻率:	9.6 GHz
最低工作頻率:	7.9 GHz
輸出功率:	131 W
封裝:	Tray
產品:	GaN HEMTs
產品類型:	GaN FETs
原廠包裝數量:	10
子類別:	Transistors
技術:	GaN
晶體管類型:	GaN HEMT
Vgs - 閘極-源極擊穿電壓:	- 10 V to 2 V
每件重量:	65.235 g

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篩選文檔:

規格書

CGHV96100F2 規格書 (PDF)

PCN

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CAHTS:: 8541290000
USHTS:: 8541290055
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: 3A001.b.3.b.2

GaN HEMTs

MACOM Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are designed to deliver high efficiency and high gain. The modules also feature wide bandwidth capabilities, making them ideal for linear and compressed amplifier circuits. GaN offers superior properties compared to silicon or gallium Arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. For design flexibility, MACOM GaN HEMTs are offered in a variety of package types, including DFN, 440193, 440196, 440166, 440206, and bare die.

X-Band GaN HEMTs & MMICs

MACOM X-Band Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) and Monolithic Microwave Integrated Circuits (MMICs) come with various solution platforms. That includes MMICs, internally matched GaN on SiC transistors (IM-FETs), and transistors. These multi-stage MMICs offer a variety of power levels, high gain, and high efficiency, while IM-FETs feature 50Ω building blocks in support of higher power systems. The transistors offer highly accurate modeling support that provides maximum flexibility to optimize amplifier design. The GaN has superior properties compared to silicon or gallium arsenide (GaAs), including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.

CGHV96100F2 GaN HEMT

MACOM CGHV96100F2 Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) on silicon carbide (SiC) substrate is an internally matched (IM) FET that offers excellent power-added efficiency compared to other technologies. GaN provides superior properties to silicon or gallium arsenide (GaAs), including higher breakdown voltage, saturated electron drift velocity, and thermal conductivity. These CGHV96100F2 GaN HEMTs also offer greater power density and wider bandwidths than GaAs transistors. This MACOM IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal performance.