NFVA25012NP2T

Name: onsemi NFVA25012NP2T
Brand: onsemi
SKU: 863-NFVA25012NP2T
Price: 2970.17 TWD
Availability: InStock

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請參閱產品規格

Mouser 編號：

863-NFVA25012NP2T

製造商編號：

NFVA25012NP2T

製造商：

onsemi

說明：

智能功率模組 - IPM 1200V/50A ASPM34

規格書:

NFVA25012NP2T 規格書

ECAD模型:

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商品屬性	屬性值	選擇屬性
製造商:	onsemi
產品類型:	智能功率模組 - IPM
RoHS:
類型:	3-Phase
集電極-發射極最大電壓VCEO:	1.2 kV
封裝/外殼:	DIP-34
安裝風格:	Through Hole
技術:	Si
最低工作溫度:	- 40 C
最高工作溫度:	+ 150 C
品牌:	onsemi
封裝:	Tube
產品類型:	Intelligent Power Modules - IPMs
系列:	NFVA25012NP2T
原廠包裝數量:	24
子類別:	Discrete and Power Modules

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篩選文檔:

規格書

NFVA25012NP2T 規格書

PCN

Material Composition Disclosure

合規守則

CNHTS:: 8542391090
USHTS:: 8542390090
ECCN:: EAR99

原產地分類

原產國:: 中國
封裝原產國:: 中國
擴散國:: 大韓民國

出貨時，國家可能會有所變更。

工業馬達驅動器

安森美 (onsemi) 工業馬達驅動器專為全球可持續發展而設計，提供高效、再生技術和智慧電力。根據美國能源部 (DOE) 發布的《2020馬達系統市場分析》（2020 Motor System Market Analysis，MSMA），工業泵和驅動器每年消耗的電量幾乎占美國電網總量的15%。2020 MSMA也估計，使用VFD每年可以節省3230萬公噸二氧化碳₂ 排放量。安森美生產各種VFD半導體元件，包括閘極驅動器、MOSFET、IGBT和EliteSiC。

Intelligent Power Modules (IPMs)

onsemi Intelligent Power Modules (IPMs) are highly integrated solid-state power switches integrating gate-drive circuitry based on IGBTs or MOSFETs in a single module. IPMs also include protection for power systems from issues such as short circuits, under voltages, and extreme temperatures. IPMs using 600V IGBTs are used in consumer and industrial applications for driving fans, pumps, and compressors. IPMs using 40V and 80V MOSFETs are increasingly used in automotive applications to drive electric fans and pumps.

NFVA25012NP2T Intelligent Power Module

onsemi NFVA25012NP2T Intelligent Power Module (IPM) integrates the optimized gate drive of the built-in IGBTs to minimize EMI and losses. This module provides a fully-featured, high-performance inverter output stage for hybrid and electric vehicles. onsemi NFVA25012NP2T IPM includes multiple on-module protection, including undervoltage lockouts, overcurrent shutdown, thermal monitoring of drive IC, and fault reporting. This module features low-loss short-circuit rated IGBTs and achieves low thermal resistance using AlN DBC substrate. The NFVA25012NP2T IPM also includes separate open-emitter pins from low-side IGBTs for three-phase current sensing.