NDSH30120C-F155

onsemi
863-NDSH30120C-F155
NDSH30120C-F155

製造商:

說明:
碳化矽肖特基二極管 SIC DIODE GEN2.0 1200V TO

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供貨情況

庫存:
0

您仍可購買此商品作為延期交貨訂單。

在途量:
900
預期2026/3/2
工廠前置作業時間:
13
工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
NT$-.--
總價:
NT$-.--
估計關稅:

Pricing (TWD)

數量 單價
總價
NT$414.12 NT$414.12
NT$289.68 NT$2,896.80
NT$283.90 NT$28,390.00
NT$246.84 NT$111,078.00
NT$232.90 NT$209,610.00

商品屬性 屬性值 選擇屬性
onsemi
產品類型: 碳化矽肖特基二極管
RoHS:  
REACH - SVHC:
Through Hole
TO-247-2
Single
38 A
1.2 kV
1.75 V
161 A
5 uA
- 55 C
+ 175 C
NDSH30120C-F155
Tube
品牌: onsemi
Pd - 功率消耗 : 333 W
產品類型: SiC Schottky Diodes
原廠包裝數量: 450
子類別: Diodes & Rectifiers
公司名稱: EliteSiC
Vr - 反向電壓: 1.2 kV
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所選屬性: 0

CNHTS:
8541100000
CAHTS:
8541100090
USHTS:
8541100080
TARIC:
8541100000
ECCN:
EAR99

D3 EliteSiC Diodes

onsemi D3 EliteSiC Diodes are a solution for applications requiring high-power PFC and output rectification. The onsemi D3 has a maximum voltage rating of 1200V. These diodes come in two package options, TO-247-2LD and TO-247-3LD, providing flexibility for various designs. The D3 EliteSiC Diodes are optimized for high-temperature operation with low series-resistance temperature dependency, ensuring consistent and reliable performance even under extreme conditions.

NDSH30120C-F155 Silicon Carbide Schottky Diode

onsemi NDSH30120C-F155 Silicon Carbide (SiC) Schottky Diode provides superior switching performance and higher reliability compared to Silicon. NDSH30120C-F155 features no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance. System benefits include high efficiency, fast operating frequency, increased power density, reduced EMI, and reduced system size and cost. This EliteSiC diode offers a positive temperature coefficient and ease of paralleling. Applications include general purpose, SMPS, solar inverters, UPS, and power switching circuits.