High-Performance SiC FETs

onsemi High-Performance SiC FETs deliver best-in-class switching speed, lower switching losses, higher efficiency, and excellent cost-effectiveness. The components are offered in standard thru-hole (including Kelvin) and surface mount packages. The family comprises the UF4C/SC, UJ4C/SC, UJ3C, and UF3C/SC series and is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode-optimized Si-MOSFET to produce a standard gate drive SiC device.

結果: 69
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (TWD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 安裝風格 封裝/外殼 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式 資格 公司名稱
onsemi 碳化矽MOSFET 650V/40MOSICFETG3TO247-4 3,278庫存量
NT$709.83
NT$418.73
最少: 1
倍數: 1
Through Hole TO-247-4 1 Channel 650 V 54 A 52 mOhms - 25 V, + 25 V 4 V 43 nC - 55 C + 175 C 326 W Enhancement AEC-Q101 SiC FET
onsemi 碳化矽MOSFET 1700V/400MOSICFETG3TO263-7 26庫存量
2,400在途量
帶狀裁切
NT$417.65
NT$295.05
NT$219.04
NT$211.87
捲
NT$204.35
最少: 1
倍數: 1
: 800
SMD/SMT D2PAK-7 1 Channel 1.7 kV 7.6 A 410 mOhms - 25 V, + 25 V 6 V 23.1 nC - 55 C + 175 C 100 W Enhancement SiC FET
onsemi 碳化矽MOSFET 650V/80MOSICFETG3TO220 475庫存量
NT$429.84
NT$247.72
NT$229.08
NT$210.44
最少: 1
倍數: 1
Through Hole TO-220-3 1 Channel 650 V 31 A 100 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 190 W Enhancement AEC-Q101 SiC FET
onsemi 碳化矽MOSFET 750V/44MOSICFETG4TO263 648庫存量
帶狀裁切
NT$502.98
NT$287.88
NT$272.46
捲
NT$272.46
最少: 1
倍數: 1
: 800
SMD/SMT D2PAK-7 1 Channel 750 V 35.6 A 56 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 181 W Enhancement SiC FET
onsemi 碳化矽MOSFET 1200V/80MOSICFETG3TO26 618庫存量
帶狀裁切
NT$689.40
NT$432.35
NT$403.67
捲
NT$403.67
最少: 1
倍數: 1
: 800
SMD/SMT D2PAK-7 1 Channel 1.2 kV 28.8 A 85 mOhms - 25 V, + 25 V 6 V 23 nC - 55 C + 175 C 190 W Enhancement SiC FET
onsemi 碳化矽MOSFET 650V/80MOSICFETG3TO247-3 684庫存量
NT$433.43
NT$238.40
NT$238.04
NT$221.55
最少: 1
倍數: 1
Through Hole TO-247-3 1 Channel 650 V 31 A 100 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 190 W Enhancement AEC-Q101 SiC FET
onsemi 碳化矽MOSFET 750V/60MOSICFETG4TO247-4 562庫存量
NT$472.50
NT$262.42
NT$247.37
最少: 1
倍數: 1
Through Hole TO-247-4 1 Channel 750 V 28 A 74 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 155 W Enhancement AEC-Q101 SiC FET
onsemi 碳化矽MOSFET 650V/30MOSICFETG3TO220-3 892庫存量
NT$919.91
NT$583.28
最少: 1
倍數: 1
Through Hole TO-220-3 1 Channel 650 V 85 A 35 mOhms - 25 V, + 25 V 5 V 51 nC - 55 C + 175 C 441 W Enhancement AEC-Q101 SiC FET
onsemi 碳化矽MOSFET 650V/40MOSICFETG3TO247 1,166庫存量
NT$699.43
NT$411.20
最少: 1
倍數: 1
Through Hole TO-247-3 1 Channel 650 V 54 A 42 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 326 W Enhancement AEC-Q101 SiC FET
onsemi 碳化矽MOSFET 750V/18MOSICFETG4TO263-7 128庫存量
800預期2027/6/4
帶狀裁切
NT$876.89
NT$654.98
NT$566.43
NT$500.82
捲
NT$500.82
最少: 1
倍數: 1
: 800
SMD/SMT D2PAK-7 1 Channel 750 V 72 A 18 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 259 W Enhancement SiC FET
onsemi 碳化矽MOSFET 650V/80MOSICFETG3TO247-4 583庫存量
NT$462.47
NT$259.55
NT$240.91
NT$228.36
最少: 1
倍數: 1
Through Hole TO-247-4 1 Channel 650 V 31 A 100 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 190 W Enhancement AEC-Q101 SiC FET
onsemi 碳化矽MOSFET 1200V/80MOSICFETG3TO24 1,142庫存量
NT$758.59
NT$456.01
最少: 1
倍數: 1
Through Hole TO-247-3 1 Channel 1.2 kV 33 A 100 mOhms - 25 V, + 25 V 6 V 51 nC - 55 C + 175 C 254.2 W Enhancement AEC-Q101 SiC FET
onsemi 碳化矽MOSFET 1200V/150MOSICFETG3TO2 343庫存量
帶狀裁切
NT$457.80
NT$262.78
NT$241.99
NT$229.08
捲
NT$229.08
最少: 1
倍數: 1
: 800
SMD/SMT D2PAK-7 1 Channel 1.2 kV 17 A 150 mOhms - 25 V, + 25 V 4.4 V 25.7 nC - 55 C + 175 C 136 W Enhancement SiC FET
onsemi 碳化矽MOSFET 1200V/40MOSICFETG3TO24 382庫存量
NT$1,314.26
NT$977.27
NT$914.18
最少: 1
倍數: 1
Through Hole TO-247-3 1 Channel 1.2 kV 65 A 45 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 429 W Enhancement AEC-Q101 SiC FET
onsemi 碳化矽MOSFET 650V/80MOSICFETG3TO247 626庫存量
NT$449.56
NT$252.74
NT$234.46
NT$221.19
最少: 1
倍數: 1
Through Hole TO-247-3 1 Channel 650 V 31 A 100 mOhms - 12 V, + 12 V 6 V 51 nC - 55 C + 175 C 190 W Enhancement AEC-Q101 SiC FET
onsemi 碳化矽MOSFET 750V/60MOSICFETG4TO263 1,266庫存量
帶狀裁切
NT$282.14
NT$152.36
NT$150.93
NT$145.55
捲
NT$145.55
NT$127.27
最少: 1
倍數: 1
: 800
SMD/SMT D2PAK-7 1 Channel 750 V 25.8 A 74 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 128 W Enhancement SiC FET
onsemi 碳化矽MOSFET 650V/30MOSICFETG3TO220 335庫存量
1,000預期2026/11/13
NT$953.25
NT$763.25
NT$660.36
NT$583.28
最少: 1
倍數: 1
Through Hole TO-220-3 1 Channel 650 V 85 A 35 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 441 W Enhancement AEC-Q101 SiC FET
onsemi 碳化矽MOSFET 1200V/40MOSICFETG3TO247-3 202庫存量
NT$1,053.27
NT$786.19
NT$783.32
NT$692.62
最少: 1
倍數: 1
Through Hole TO-247-3 1 Channel 1.2 kV 65 A 45 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 429 W Enhancement SiC FET
onsemi 碳化矽MOSFET 650V/30MOSICFETG3TO247-3 513庫存量
NT$968.31
NT$586.86
最少: 1
倍數: 1
Through Hole TO-247-3 1 Channel 650 V 85 A 35 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 441 W Enhancement AEC-Q101 SiC FET
onsemi 碳化矽MOSFET 750V/60MOSICFETG4TO247 1,242庫存量
NT$507.99
NT$330.90
NT$287.88
NT$258.48
NT$239.12
最少: 1
倍數: 1
Through Hole TO-247-3 1 Channel 750 V 28 A 74 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 155 W Enhancement AEC-Q101 SiC FET
onsemi 碳化矽MOSFET 750V/11MOSICFETG4TO263-7 279庫存量
帶狀裁切
NT$1,060.44
NT$839.97
NT$772.57
NT$698.36
捲
NT$698.36
最少: 1
倍數: 1
: 800
SMD/SMT D2PAK-7L 1 Channel 750 V 104 A 11 mOhms - 20 V, + 20 V 5.5 V 75 nC - 55 C + 175 C 357 W Enhancement SiC FET
onsemi 碳化矽MOSFET 650V/7MOSICFETG3TO247-4 445庫存量
NT$2,793.07
NT$2,356.06
最少: 1
倍數: 1
Through Hole TO-247-4 1 Channel 650 V 120 A 9 mOhms - 12 V, + 12 V 6 V 214 nC - 55 C + 175 C 789 W Enhancement AEC-Q101 SiC FET
onsemi 碳化矽MOSFET 1200V/16MOSICFETG3TO247-4 466庫存量
NT$2,532.80
NT$2,053.13
最少: 1
倍數: 1
Through Hole TO-247-4 1 Channel 1.2 kV 107 A 21 mOhms - 20 V, + 20 V 4 V 218 nC - 55 C + 175 C 517 W Enhancement AEC-Q101 SiC FET
onsemi 碳化矽MOSFET 650V/80MOSICFETG3TO263-3 1,241庫存量
帶狀裁切
NT$422.31
NT$243.42
NT$221.19
NT$209.36
捲
NT$209.36
最少: 1
倍數: 1
: 800
SMD/SMT D2PAK-3 (TO-263-3) 1 Channel 650 V 25 A 100 mOhms - 25 V, + 25 V 4 V 51 nC - 55 C + 175 C 115 W Enhancement AEC-Q101 SiC FET
onsemi 碳化矽MOSFET 1200V/9MOSICFETG3TO247-4 358庫存量
NT$2,524.56
NT$1,992.18
最少: 1
倍數: 1
Through Hole TO-247-4 1 Channel 1.2 kV 120 A 11 mOhms - 20 V, + 20 V 4 V 234 nC - 55 C + 175 C 789 W Enhancement AEC-Q101 SiC FET