1200V CoolSiC Generation 5肖特基二極體

Infineon 1200V CoolSiC Generation 5 Schottky Diodes are offered with forward currents up to 40A for TO-247, 20A in TO-220 and 10A in DPAK. CoolSiC Generation 5 target solar inverters, UPS, 3P SMPS, energy storage and motor drives applications. With Generation 5, reduction of forward voltage and its temperature dependency brings a new level of system efficiency. Moreover, an improved thermal performance compared to a silicon based solution increases system reliability and the possibility to increase output power in a given form factor. Combined with a Si HighSpeed 3 IGBT, they deliver 40% lower Si IGBT turn-on losses and reduced EMI.
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結果: 30
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說明 規格書 供貨情況 定價 (TWD) 基於數量按單價篩選表中結果。
數量 RoHS ECAD模型 安裝風格
封裝/外殼
配置
If - 順向電流
Vrrm - 重複反向電壓
Vf - 順向電壓
Ifsm - 順向浪湧電流
Ir - 反向電流
最低工作溫度
最高工作溫度
系列
封裝
Infineon Technologies 碳化矽肖特基二極管 SIC CHIP/DISCRETE
規格書
997預期2026/4/2
最少： 1
倍數： 1

Through Hole TO-220-2 Single 8 A 1.2 kV 1.65 V 70 A 3 uA - 55 C + 175 C IDH08G120C5 Tube
Infineon Technologies 碳化矽肖特基二極管 SIC DISCRETE
規格書
1庫存量
最少： 1
倍數： 1
捲: 1,000

SMD/SMT Single 5 A 1.2 kV 1.8 V 59 A 33 uA - 55 C + 175 C IDK05G120C5 Reel, Cut Tape
Infineon Technologies 碳化矽肖特基二極管 SIC CHIP/DISCRETE
規格書
480預期2026/6/11
最少： 1
倍數： 1

Through Hole TO-247-3 Dual Anode Common Cathode 40 A 1.2 kV 1.4 V 290 A 23 uA - 55 C + 175 C IDW40G120C5 Tube
Infineon Technologies 碳化矽肖特基二極管 SIC DISCRETE
規格書
954預期2026/7/2
最少： 1
倍數： 1

Through Hole TO-220-2 Single 5 A 1.2 kV 1.5 V 59 A 2.5 uA - 55 C + 175 C IDH05G120C5 Tube
Infineon Technologies 碳化矽肖特基二極管 SIC DISCRETE
規格書
無庫存前置作業時間 26 週
最少： 1,000
倍數： 1,000
捲: 1,000

SMD/SMT Single 16 A 1.2 kV 1.95 V 140 A 80 uA - 55 C + 175 C IDK16G120C5 Reel