RGW00TK65DGVC11

ROHM Semiconductor
755-RGW00TK65DGVC11
RGW00TK65DGVC11

製造商：

說明：
IGBT 650V 50A TO-3PFM Field Stp Trnch IGBT

規格書:
ECAD模型:
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供貨情況

庫存：
暫無庫存
工廠前置作業時間：
22 週 工廠預計生產時間。
最少： 1   多個： 1
單價:
NT$-.--
總價:
NT$-.--
估計關稅:

Pricing (TWD)

數量 單價
總價
NT$281.18 NT$281.18
NT$164.56 NT$1,645.60
NT$138.72 NT$13,872.00
NT$122.40 NT$55,080.00

商品屬性 屬性值 選擇屬性
ROHM Semiconductor
產品類型: IGBT
RoHS:  
Si
TO-3PFM-3
Through Hole
Single
650 V
1.9 V
30 V
45 A
89 W
- 40 C
+ 175 C
Tube
品牌: ROHM Semiconductor
柵射極漏電電流: 200 nA
產品類型: IGBT Transistors
原廠包裝數量: 450
子類別: IGBTs
零件號別名: RGW00TK65D
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所選屬性: 0

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CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

Field Stop Trench IGBTs

ROHM Field Stop Trench IGBTs are energy-saving, high-efficiency IGBTs used in a wide range of high-voltage and high-current applications. These IGBTs feature a low collector and emitter saturation voltage, short-circuit that withstands time, and built-in very fast and soft recovery FRD. The field stop trench IGBTs are ideal for UPS, power conditioners, welder, and general inverters for industrial use.

RGW 650V Field Stop Trench IGBTs

ROHM Semiconductor RGW 650V Field Stop Trench IGBTs offer a low collector-emitter saturation voltage in a small package. The RGW IGBTs feature high-speed switching, low switching loss, and built-in very fast and soft recovery FRD. The ROHM RGW 650V Field Stop Trench IGBTs are ideal for solar inverter, UPS, welding, IH, and PFC applications.

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