似乎你已停用瀏覽器的JavaScript。除非你登入，否則此頁面上的某些功能將無法使用。

SIHH070N60EF-T1GE3

Name: Vishay SIHH070N60EF-T1GE3
Brand: Vishay / Siliconix
SKU: 78-SIHH070N60EFT1GE3
Price: 288.32 TWD
Availability: InStock

影像僅供參考
請參閱產品規格

Mouser 編號：

78-SIHH070N60EFT1GE3

製造商編號：

SIHH070N60EF-T1GE3

製造商：

Vishay / Siliconix

說明：

MOSFET 600V PowerPAK 8x8 N-CHANNEL

規格書:

SIHH070N60EF-T1GE3 規格書

ECAD模型:

下載免費的庫載入器，為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

更多資訊

瞭解更多關於Vishay / Siliconix SIHH070N60EF-T1GE3的資訊

庫存量: 3,179

庫存：: 3,179 可立即送貨

發生意外錯誤了。請稍後再試。
工廠前置作業時間：: 2 週工廠預計生產時間數量大於所顯示的數量。

輸入數量：

最少： 1 多個： 1

單價:

NT$-.--

總價:

NT$-.--

估計關稅:

包裝:

完整捲（訂購多個3000）

帶狀裁切

MouseReel™ (+NT$215.00)

Pricing (TWD)

數量	單價	總價
零卷 / MouseReel™ ^†
	NT$288.32	NT$288.32
	NT$176.46	NT$1,764.60
	NT$156.40	NT$15,640.00
	NT$155.72	NT$77,860.00
	NT$155.38	NT$155,380.00
完整捲（訂購多個3000）
	NT$133.62	NT$400,860.00
6,000	報價

† NT$215.00 MouseReel™費用將加入您的購物車內並自動計算。所有MouseReel™訂單均不能取消和不能退換。 ↩

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

商品屬性	屬性值	選擇屬性
製造商:	Vishay
產品類型:	MOSFET
RoHS:
技術:	Si
安裝風格:	SMD/SMT
封裝/外殼:	PowerPAK-8 x 8
晶體管極性:	N-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	600 V
Id - C連續漏極電流:	36 A
Rds On - 漏-源電阻:	71 mOhms
Vgs - 閘極-源極電壓:	- 30 V, 30 V
Vgs th - 門源門限電壓 :	5 V
Qg - 閘極充電:	50 nC
最低工作溫度:	- 55 C
最高工作溫度:	+ 150 C
Pd - 功率消耗 :	202 W
通道模式:	Enhancement
封裝:	Reel
封裝:	Cut Tape
封裝:	MouseReel
品牌:	Vishay / Siliconix
配置:	Single
下降時間:	38 ns
互導 - 最小值:	10.5 S
產品類型:	MOSFETs
上升時間:	79 ns
系列:	SIHH EF
原廠包裝數量:	3000
子類別:	Transistors
晶體管類型:	1 N-Channel
標準斷開延遲時間:	55 ns
標準開啟延遲時間:	36 ns
每件重量:	50 mg

找到產品:

若要顯示類似商品，請選取至少一個核選方塊

至少選中以上一個核取方塊以顯示在此類別中類似的產品。

所選屬性: 0

篩選文檔:

CNHTS:: 8541290000
TARIC:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

4th Generation EF Series MOSFETs

Vishay / Siliconix 4th Generation EF Series MOSFETs offer an extremely low figure-of-merit (FOM) rating for high-performance switching and high efficiency. The MOSFET FOM is calculated as ON-resistance (R_(DS)ON) multiplied by gate charge (Q_g). Built on Vishay 4th generation super-junction technology, these MOSFETs feature a low typical ON-resistance range of 0.088Ω to 0.225Ω at V_GS=10V and a gate charge down to 21nC. For improved switching performance, these devices provide low effective output capacitances (Co_(er) and Co_(tr)). These values translate into reduced conduction and switching losses to save energy. Vishay / Siliconix 4th Generation EF Series MOSFETs are offered in PowerPAK® 8x8 and TO-220AB packages. The series is designed to withstand overvoltage transients in avalanche mode with guaranteed limits through 100% UIS testing.

SiHH070N60EF Power MOSFET

Vishay SiHH070N60EF Power MOSFET features 4th generation E series technology, low Figure-of-Merit (FOM), and low effective capacitance. This power MOSFET is avalanche energy rated (UIS) and reduces switching and conduction losses. Typical applications include server and telecom power supplies, switch-mode power supplies (SMPS), power factor correction (PFC) power supplies, motor drives, battery chargers, and welding.