NDSH20120CDN

onsemi
863-NDSH20120CDN
NDSH20120CDN

製造商:

說明:
碳化矽肖特基二極管 SIC DIODE GEN2.0 1200V TO247-3L

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

商品屬性 屬性值 選擇屬性
onsemi
產品類型: 碳化矽肖特基二極管
RoHS:  
REACH - SVHC:
Through Hole
TO-247-3
Dual Anode Common Cathode
24 A
1.2 kV
1.75 V
59 A
1 uA
- 55 C
+ 175 C
1.2 kV
NDSH20120CDN
Tube
品牌: onsemi
Pd - 功率消耗 : 94 W
產品類型: SiC Schottky Diodes
原廠包裝數量: 30
子類別: Diodes & Rectifiers
公司名稱: EliteSiC
找到產品:
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所選屬性: 0

合規守則
CAHTS:
8541100090
USHTS:
8541100080
TARIC:
8541100000
ECCN:
EAR99
原產地分類
原產國:
中國
封裝原產國:
中國
擴散國:
大韓民國
出貨時,國家可能會有所變更。

NDSH20120CDN Silicon Carbide (SiC) Schottky Diode

onsemi NDSH20120CDN Silicon Carbide (SiC) Schottky Diode provides superior switching performance and higher reliability compared to Silicon. The TO-247-3LD packaged NDSH20120CDN features no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance. System benefits include high efficiency, fast operating frequency, increased power density, reduced EMI, and reduced system size and cost. This EliteSiC diode offers a positive temperature coefficient and ease of paralleling.

D3 EliteSiC Diodes

onsemi D3 EliteSiC Diodes are a solution for applications requiring high-power PFC and output rectification. The onsemi D3 has a maximum voltage rating of 1200V. These diodes come in two package options, TO-247-2LD and TO-247-3LD, providing flexibility for various designs. The D3 EliteSiC Diodes are optimized for high-temperature operation with low series-resistance temperature dependency, ensuring consistent and reliable performance even under extreme conditions.

庫存量: 400

庫存:
400 可立即送貨
工廠前置作業時間:
41 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
NT$-.--
總價:
NT$-.--
估計關稅:

Pricing (TWD)

數量 單價
總價
NT$345.95 NT$345.95
NT$238.04 NT$2,380.40
NT$225.50 NT$27,060.00
NT$205.06 NT$104,580.60
NT$191.44 NT$195,268.80
25,020 報價