FGH50T65UPD

onsemi
512-FGH50T65UPD
FGH50T65UPD

製造商:

說明:
IGBT 650 V 100 A 240 W

壽命週期:
NRND:
不建議用於新設計。
ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 81

庫存:
81 可立即送貨
工廠前置作業時間:
8 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
NT$-.--
總價:
NT$-.--
估計關稅:

Pricing (TWD)

數量 單價
總價
NT$258.74 NT$258.74
NT$149.94 NT$1,499.40
NT$125.80 NT$15,096.00
NT$125.12 NT$63,811.20

商品屬性 屬性值 選擇屬性
onsemi
產品類型: IGBT
RoHS:  
REACH - SVHC:
Si
TO-247
Through Hole
Single
650 V
1.65 V
- 20 V, 20 V
100 A
340 W
- 55 C
+ 175 C
FGH50T65UPD
Tube
品牌: onsemi
柵射極漏電電流: 400 nA
產品類型: IGBT Transistors
原廠包裝數量: 30
子類別: IGBTs
每件重量: 6.390 g
找到產品:
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所選屬性: 0

CNHTS:
8541210000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

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FGHx0T65 650V Field Stop IGBTs

onsemi FGHx0T65 650V Field Stop IGBTs use innovative field stop trench IGBT technology. These IGBTs offer optimum performance. The FGHx0T65 IGBTs feature positive temperature coefficient for easy parallel operating, high current capability, high input impedance, and tightened parameter distribution. Typical applications include solar inverters, UPS, welders, and digital power generators that require low conduction and switching losses.