SBR20E100CT

Name: Diodes Incorporated SBR20E100CT
Brand: Diodes Incorporated
SKU: 621-SBR20E100CT
Price: 59.87 TWD
Availability: OutOfStock

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請參閱產品規格

Mouser 編號：

621-SBR20E100CT

製造商編號：

SBR20E100CT

製造商：

Diodes Incorporated

說明：

肖特基二極體及整流器 20A SBR 100Vrrm 120Vrwm 180Ifsm

壽命週期:

壽命結束:

計劃停產且製造商將停止供貨。

規格書:

SBR20E100CT 規格書 (PDF)

ECAD模型:

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商品屬性	屬性值	選擇屬性
製造商:	Diodes Incorporated
產品類型:	肖特基二極體及整流器
RoHS:
REACH - SVHC:
產品:	Schottky Rectifiers
安裝風格:	Through Hole
封裝/外殼:	TO-220AB-3
配置:	Dual Anode Common Cathode
技術:	Si
If - 順向電流:	20 A
Vrrm - 重複反向電壓:	100 V
Vf - 順向電壓:	850 mV
Ifsm - 順向浪湧電流:	250 A
Ir - 反向電流:	100 uA
最低工作溫度:	- 65 C
最高工作溫度:	+ 175 C
系列:	SBR20E100
封裝:	Tube
品牌:	Diodes Incorporated
產品類型:	Schottky Diodes & Rectifiers
原廠包裝數量:	50
子類別:	Diodes & Rectifiers
Vr - 反向電壓:	100 V
每件重量:	1.850 g

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所選屬性: 0

篩選文檔:

合規守則

CNHTS:: 8504409190
CAHTS:: 8541100090
USHTS:: 8541100080
JPHTS:: 854110090
KRHTS:: 8541109000
TARIC:: 8541100000
MXHTS:: 8541100101
ECCN:: EAR99

原產地分類

原產國:: 中國
封裝原產國:: 無資料
擴散國:: 無資料

出貨時，國家可能會有所變更。

SBR20E100x Super Barrier Rectifiers

Diodes Inc. SBR20E100x Super Barrier Rectifiers deliver low forward voltage drop (VF) with excellent low reverse leakage stability at high temperatures. These rectifiers are composed of molded plastic in a TO-220AB case with matte tin finish terminals annealed over a copper lead frame. Patented SBR technology provides good avalanche capability ensuring rugged and reliable end applications. SBR20E100x rectifiers are designed to be used as rectification, freewheeling, or polarity protection diodes for DC-DC converters and AC-DC adapters/chargers. The Halogen and Antimony free green devices include a lead-free finish and ROHS compliance.

SBR® Super Barrier Rectifiers

Diodes Inc SBR^® Super Barrier Rectifiers use a MOS manufacturing process to create a superior two-terminal device with a lower forward voltage than comparable Schottky diodes while possessing the thermal stability and high reliability characteristics of PN epitaxial diodes. SBR Diodes are designed for high power, low loss and fast switching applications. The presence of a MOS channel within its structure forms a low potential barrier for the majority carriers. That means SBR forward bias operation at low voltage is similar to a Schottky diode. The leakage current is lower than Schottky Diode in reverse bias due to the overlap of the P-N depletion layers and the absence of potential barrier reduction due to the image charge.