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RD3S100AAFRATL

Name: ROHM Semiconductor RD3S100AAFRATL
Brand: ROHM Semiconductor
SKU: 755-RD3S100AAFRATL
Price: 123.76 TWD
Availability: InStock

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請參閱產品規格

Mouser 編號：

755-RD3S100AAFRATL

製造商編號：

RD3S100AAFRATL

製造商：

ROHM Semiconductor

說明：

MOSFET Transistor, MOSFET Nch, 190V(Vdss), 10.0A(Id), (10V Drive)

規格書:

RD3S100AAFRATL 規格書

ECAD模型:

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庫存量: 2,856

庫存：: 2,856 可立即送貨

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工廠前置作業時間：: 16 週工廠預計生產時間數量大於所顯示的數量。

輸入數量：

最少： 1 多個： 1

單價:

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總價:

NT$-.--

估計關稅:

Pricing (TWD)

數量	單價	總價
	NT$123.76	NT$123.76
	NT$81.26	NT$812.60
	NT$56.78	NT$5,678.00
	NT$49.64	NT$24,820.00
	NT$45.56	NT$45,560.00
完整捲（訂購多個2500）
	NT$41.82	NT$104,550.00
	NT$40.46	NT$202,300.00
25,000	報價

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商品屬性	屬性值	選擇屬性
製造商:	ROHM Semiconductor
產品類型:	MOSFET
RoHS:
技術:	Si
安裝風格:	SMD/SMT
封裝/外殼:	TO-252-3
晶體管極性:	N-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	190 V
Id - C連續漏極電流:	10 A
Rds On - 漏-源電阻:	182 mOhms
Vgs - 閘極-源極電壓:	- 20 V, 20 V
Vgs th - 門源門限電壓 :	2.5 V
Qg - 閘極充電:	52 nC
最低工作溫度:	- 55 C
最高工作溫度:	+ 150 C
Pd - 功率消耗 :	85 W
通道模式:	Enhancement
資格:	AEC-Q101
封裝:	Reel
封裝:	Cut Tape
品牌:	ROHM Semiconductor
配置:	Single
下降時間:	75 ns
互導 - 最小值:	6 S
產品類型:	MOSFETs
上升時間:	20 ns
系列:	RD3
原廠包裝數量:	2500
子類別:	Transistors
晶體管類型:	1 N-Channel
標準斷開延遲時間:	140 ns
標準開啟延遲時間:	15 ns
零件號別名:	RD3S100AAFRA
每件重量:	330 mg

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所選屬性: 0

                        
ROHM Semiconductors AEC-Q101 qualified products are not 
intended for volume automotive production without ROHM 
Semiconductors prior approval. 

Please contact ROHM Semiconductor for Production Part Approval 
Process (PPAP) requirements or contact a Mouser Technical Sales 
Representative for further assistance. 

5-0617-50

篩選文檔:

規格書

RD3S100AAFRATL 規格書

Specification Sheets

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CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

AEC-Q101 Automotive MOSFETs

ROHM Semiconductor AEC-Q101 Automotive MOSFETs provide wide drive type and support from a small signal to high power. These ROHM Semiconductor MOSFETs are available in a wide range of microminiature packages and help reduce the board space. The AEC-Q101 MOSFETs are automotive-supported products and are based on standard AEC-Q101. These MOSFETs offer high-speed switching and low on-resistance. The AEC-Q101 MOSFETs are available in single and dual polarities and provide a drain-source voltage ranging from -100V_DSS to 100V_DSS. These MOSFETs offer a drain-current ranging from -25A to 40A and R_DS(on) ranging from 0.004Ω to 3Ω (typical). The AEC-Q101 MOSFETs provide a total gate charge of 2nC to 80nC.

N-Channel SiC Power MOSFETs

ROHM Semiconductor N-Channel Silicon Carbide (SiC) Power MOSFETs feature no tail current during switching, resulting in faster operation and reduced switching loss. Their low ON resistance and compact chip size ensure low capacitance and gate charge. These ROHM SiC Power MOSFETs exhibit minimal ON-resistance increases and provides greater package miniaturization. This provides more energy savings than standard Si devices, in which the ON-resistance can more than double with increased temperature.

Silicon Power MOSFETs

ROHM Semiconductor Silicon Power MOSFETs feature ultra-fast switching speeds and low on-resistance. These MOSFETs are available in a wide lineup of packages, including the miniature 0604 size to save space in various designs.

Automotive Solutions

ROHM Automotive Solutions contribute to the continuing evolution of the automotive sector through a stable, long-term supply of high-quality products. An expansive lineup supports the transition towards increased electrification and connectivity. ROHM can provide optimized solutions to suit various customer needs by focusing on safety, comfort, and the environment.

RD3S100AAFRA N-Ch 190V 10A Power MOSFET

ROHM Semiconductor RD3S100AAFRA N-Ch 190V 10A Power MOSFET features a low on-resistance and fast switching speed. The RD3S100AAFRA MOSFET is can easily be set up for parallel use. The ROHM RD3S100AAFRA Power MOSFET is designed for switching power supply applications.

RD3x Automotive N-Channel Power MOSFETs

ROHM Semiconductor RD3x Automotive N-Channel Power MOSFETs are high-performance switching and rectifier devices designed for use in a wide range of power and signal applications. The AEC-Q101-qualified ROHM RD3x components feature low forward voltage, fast recovery time, and high surge current capability, making the MOSFETs ideal for efficient power conversion and protection in compact electronic systems. With options tailored for automotive, industrial, and consumer electronics, the RD3 family supports applications such as DC-DC converters, motor drivers, LED lighting, and battery-powered devices. A compact surface-mount (TO-252-3) package and low leakage current contribute to space-saving and energy-efficient designs, while high reliability ensures stable performance under demanding conditions.