High-Speed IGBT4 Power Modules

Microchip Technology High-Speed IGBT4 Power Modules feature low voltage drop, low leakage current, and low switching losses. These modules operate at 1200V collector-emitter voltage (VCES) and provide very low stray inductance, Kelvin emitter/source for an easy drive, and extended temperature range. The benefits of IGBT4 modules are high-efficiency converters, offer outstanding performance at high-frequency operation, low profile, and low junction-to-heatsink thermal resistance. These modules are used in applications like high-reliability power systems, AC switches, high-efficiency AC/DC and DC/AC converters, and motor control.

結果: 7
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (TWD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 產品 配置 集電極-發射極最大電壓VCEO 集電極-發射極飽和電壓 連續集電極電流在25 C 柵射極漏電電流 Pd - 功率消耗 最低工作溫度 最高工作溫度
Microchip Technology IGBT 模組 PM-IGBT-SBD-BL3 12庫存量
最少: 1
倍數: 1
IGBT Modules Full Bridge 1.2 kV 2.4 V 160 A 150 nA 470 W - 55 C + 175 C
Microchip Technology IGBT 模組 PM-IGBT-SBD-BL1 9庫存量
最少: 1
倍數: 1
IGBT Modules Half Bridge 1.2 kV 2.4 V 110 A 150 nA 375 W - 55 C + 175 C
Microchip Technology IGBT 模組 PM-IGBT-SBD-BL2 7庫存量
最少: 1
倍數: 1
IGBT Modules Asymmetrical Bridge 1.2 kV 2.4 V 110 A 150 nA 375 W - 55 C + 175 C
Microchip Technology IGBT 模組 PM-IGBT-SBD-BL1 9庫存量
最少: 1
倍數: 1
IGBT Modules Dual Common Source 1.2 kV 2.4 V 110 A 150 nA 375 W - 55 C + 175 C
Microchip Technology IGBT 模組 PM-IGBT-SBD-BL3 4庫存量
最少: 1
倍數: 1

IGBT Modules Double Dual Common Source 1.2 kV 2.4 V 160 A 150 nA 470 W - 55 C + 175 C
Microchip Technology IGBT 模組 PM-IGBT-SBD-BL2 6庫存量
最少: 1
倍數: 1
IGBT Modules Double Dual Common Source 1.2 kV 2.4 V 110 A 150 nA 375 W - 55 C + 175 C
Microchip Technology IGBT 模組 PM-IGBT-SBD-BL2
3預期2026/3/9
最少: 1
倍數: 1
IGBT Modules Full Bridge 1.2 kV 2.4 V 110 A 150 nA 375 W - 55 C + 175 C