1200V H Series Trench Gate Field-Stop IGBTs

STMicroelectronics 1200V H Series Trench Gate Field-Stop IGBTs represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. With ST's advanced Trench-Gate Field-Stop High-Speed technology, these IGBTs have a 5μs minimum short circuit withstand time at TJ=150°C, minimal collector current turn off tail, and very low saturation voltage (VCE(sat)) down to 2.1V (typical) to minimize energy losses during switching and when turned on. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

結果: 20
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說明 規格書 供貨情況 定價 (TWD) 基於數量按單價篩選表中結果。
數量 RoHS ECAD模型 技術
封裝/外殼
安裝風格
配置
集電極-發射極最大電壓VCEO
集電極-發射極飽和電壓
柵極發射機最大電壓
連續集電極電流在25 C
Pd - 功率消耗
最低工作溫度
最高工作溫度
系列
封裝
STMicroelectronics IGBT Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a TO-247 long l
規格書
911庫存量
最少： 1
倍數： 1

Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 40 A 147 W - 55 C + 175 C Tube
STMicroelectronics IGBT Trench gate field-stop IGBT, H series 600 V, 5 A high speed
規格書
2,258庫存量
最少： 1
倍數： 1

Si TO-220FP-3 Through Hole Single 600 V 1.5 V - 20 V, 20 V 10 A 24 W - 55 C + 175 C STGF5H60DF Tube
STMicroelectronics IGBT Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO-247 long
規格書
617庫存量
最少： 1
倍數： 1

Si TO-247-3 Through Hole Single 650 V 1.55 V - 20 V, 20 V 86 A 272 W - 55 C + 175 C HB2 Tube
STMicroelectronics IGBT Trench gate field-stop IGBT, H series 600 V, 5 A high speed
規格書
3,931庫存量
1,000預期2026/11/9
最少： 1
倍數： 1

Si TO-220-3 Through Hole Single 600 V 1.5 V - 20 V, 20 V 10 A 88 W - 55 C + 175 C STGP5H60DF Tube
STMicroelectronics IGBT Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
規格書
1,119庫存量
最少： 1
倍數： 1

Si TO-247-3 Through Hole Single 1.2 kV 2.1 V - 20 V, 20 V 50 A 375 W - 55 C + 175 C STGW25H120DF2 Tube
STMicroelectronics IGBT Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
規格書
512庫存量
最少： 1
倍數： 1

Si TO-247-3 Through Hole Single 1.2 kV 2.1 V - 20 V, 20 V 50 A 375 W - 55 C + 175 C STGW25H120F2 Tube
STMicroelectronics IGBT Trench gate field-stop 1200 V 50 A high-speed H series IGBT
規格書
436庫存量
最少： 1
倍數： 1

Si Through Hole Single 1.2 kV 2.1 V - 20 V, 20 V 100 A 535 W - 55 C + 175 C Tube
STMicroelectronics IGBT Trench gate field-stop IGBT, H series 1200 V, 15 A high speed
規格書
57庫存量
1,200在途量
最少： 1
倍數： 1

Si TO-247-3 Through Hole Single 1.2 kV 2.1 V - 20 V, 20 V 30 A 259 W - 55 C + 175 C STGW15H120DF2 Tube
STMicroelectronics IGBT Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
規格書
170庫存量
3,600在途量
最少： 1
倍數： 1

Si TO-247-3 Through Hole Single 1.2 kV 2.1 V - 20 V, 20 V 80 A 468 W - 55 C + 175 C STGW40H120DF2 Tube
STMicroelectronics IGBT Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
規格書
434庫存量
最少： 1
倍數： 1

Si TO-247-3 Through Hole Single 1.2 kV 2.1 V - 20 V, 20 V 80 A 468 W - 55 C + 175 C STGW40H120F2 Tube

STMicroelectronics IGBT Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
規格書
34庫存量
600預期2026/9/7
最少： 1
倍數： 1

Si TO-247-3 Through Hole Single 1.2 kV 2.5 V - 20 V, 20 V 80 A 468 W - 55 C + 175 C STGWA40H120DF2 Tube


STMicroelectronics IGBT Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO247-4 pac
規格書
597預期2026/6/15
最少： 1
倍數： 1

Si Through Hole Single 650 V 1.55 V - 20 V, 20 V 115 A 357 W - 55 C + 175 C Tube
STMicroelectronics IGBT Trench gate field-stop, 650 V, 20 A, high speed HB2 series IGBT in a TO-247 long
規格書
493庫存量
最少： 1
倍數： 1

Si TO-247-3 Through Hole Single 650 V 1.65 V - 20 V, 20 V 40 A 147 W - 55 C + 175 C HB2 Tube
STMicroelectronics IGBT Trench gate field-stop IGBT, H series 600 V, 5 A high speed
規格書
4,882預期2026/6/18
可選用MouseReel
最少： 1
倍數： 1
: 2,500

Si DPAK-3 (TO-252-3) SMD/SMT Single 600 V 1.5 V - 20 V, 20 V 10 A 83 W - 55 C + 175 C STGD5H60DF Reel, Cut Tape, MouseReel


STMicroelectronics IGBT Trench gate field-stop IGBT, H series 1200 V, 15 A high speed
規格書
600在途量
最少： 1
倍數： 1

Si Through Hole Single 1.2 kV 2.5 V - 20 V, 20 V 30 A 259 W - 55 C + 175 C STGWA15H120DF2 Tube
STMicroelectronics IGBT Trench gate field-stop IGBT, H series 600 V, 7 A high speed
規格書
前置作業時間 15 週
最少： 1
倍數： 1

Si TO-220-3 Through Hole Single 600 V 1.95 V - 20 V, 20 V 14 A 88 W - 55 C + 175 C STGP7H60DF Tube
STMicroelectronics IGBT Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
規格書
無庫存前置作業時間 14 週
最少： 1
倍數： 1

Si Through Hole Single 1.2 kV 2.5 V - 20 V, 20 V 50 A 375 W - 55 C + 175 C STGWA25H120DF2 Tube
STMicroelectronics IGBT Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
規格書
無庫存前置作業時間 14 週
最少： 600
倍數： 600

Si Through Hole Single 1.2 kV 2.5 V - 20 V, 20 V 50 A 375 W - 55 C + 175 C STGWA25H120F2 Tube
STMicroelectronics IGBT Trench gate field-stop IGBT, H series 600 V, 5 A high speed
規格書
無庫存前置作業時間 15 週
最少： 2,000
倍數： 1,000
: 1,000

Si D2PAK-3 SMD/SMT Single 600 V 1.5 V - 20 V, 20 V 10 A 88 W - 55 C + 175 C STGB5H60DF Reel
STMicroelectronics IGBT Trench gate field-stop 650 V, 30 A, soft-switching IH series IGBT in a TO-247 lo
規格書
無庫存前置作業時間 14 週
最少： 600
倍數： 600

Si TO-247-3 Through Hole Single 650 V 1.55 V - 20 V, 20 V 60 A 180 W - 55 C + 175 C Tube