ThunderFET® Power MOSFETs

Vishay / Siliconix ThunderFET® Power MOSFETs provide low values of on-resistance for 100V MOSFETs with 4.5V ratings. The lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. Vishay / Siliconix ThunderFET Power MOSFETs are optimized for primary-side switching and secondary-side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The 4.5V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered.

結果: 80
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說明 規格書 供貨情況 定價 (TWD) 基於數量按單價篩選表中結果。
數量 RoHS ECAD模型 技術
安裝風格
封裝/外殼
晶體管極性
通道數
Vds - 漏-源擊穿電壓
Id - C連續漏極電流
Rds On - 漏-源電阻
Vgs - 閘極-源極電壓
Vgs th - 門源門限電壓
Qg - 閘極充電
最低工作溫度
最高工作溫度
Pd - 功率消耗
通道模式
公司名稱
封裝
Vishay Semiconductors MOSFET 100V Vds 20V Vgs D2PAK (TO-263)
規格書
94庫存量
2,400預期2026/9/21
可選用MouseReel
最少： 1
倍數： 1
捲: 800

Si SMD/SMT TO-263-3 N-Channel 1 Channel 100 V 50 A 8.9 mOhms - 20 V, 20 V 4 V 33 nC - 55 C + 175 C 125 W Enhancement ThunderFET Reel, Cut Tape, MouseReel
Vishay / Siliconix MOSFET 100V Vds 20V Vgs TO-220
規格書
1,085庫存量
最少： 1
倍數： 1

Si Through Hole TO-220-3 N-Channel 1 Channel 100 V 131 A 4.8 mOhms - 20 V, 20 V 2 V 81 nC - 55 C + 175 C 200 W Enhancement ThunderFET Tube
Vishay Semiconductors MOSFET 150V Vds 20V Vgs TO-220
規格書
1,950預期2026/3/23
最少： 1
倍數： 1

Si Through Hole TO-220-3 N-Channel 1 Channel 150 V 128 A 7.8 mOhms - 20 V, 20 V 2 V 95 nC - 55 C + 175 C 375 W Enhancement ThunderFET Tube
Vishay Semiconductors MOSFET 100V Vds 20V Vgs PowerPAK SC-75
規格書
33,000在途量
可選用MouseReel
最少： 1
倍數： 1
捲: 3,000

Si SMD/SMT SC-75-6 N-Channel 1 Channel 100 V 6.3 A 153 mOhms - 20 V, 20 V 1.6 V 5 nC - 55 C + 150 C 13 W Enhancement TrenchFET, PowerPAK Reel, Cut Tape, MouseReel
Vishay / Siliconix MOSFET 100V Vds 20V Vgs TO-220 FULLPAK
規格書
暫無庫存
最少： 1,000
倍數： 1,000

Si Through Hole TO-220-3 N-Channel 1 Channel 100 V 42.8 A 9.3 mOhms - 20 V, 20 V 4 V 33 nC - 55 C + 150 C 35.7 W Enhancement ThunderFET Tube