IXFH60N65X2-4 & IXFH80N65X2-4 X2-Class MOSFETs

IXYS IXFH60N65X2-4 and IXFH80N65X2-4 X2-Class Discrete MOSFETs offer low drain-source resistance (38mΩ or 52mΩ) and low gate charge in an avalanche-rated international standard package. The IXYS IXFH60N65X2-4 and IXFH80N65X2-4 X2-Class Discrete MOSFETs also feature low package inductance and a 650V drain-source breakdown voltage. Applications include switch-mode and resonant-mode power supplies, DC-DC converters, and more.