STP50N60DM6

STMicroelectronics
511-STP50N60DM6
STP50N60DM6

製造商:

說明:
MOSFET N-channel 600 V, 70 mOhm typ., 36 A MDmesh DM6 Power MOSFET in a TO-220 package

ECAD模型:
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庫存量: 209

庫存:
209 可立即送貨
工廠前置作業時間:
14 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
NT$-.--
總價:
NT$-.--
估計關稅:

Pricing (TWD)

數量 單價
總價
NT$210.46 NT$210.46
NT$119.68 NT$1,196.80
NT$109.82 NT$10,982.00
NT$101.32 NT$50,660.00

商品屬性 屬性值 選擇屬性
STMicroelectronics
產品類型: MOSFET
RoHS:  
Si
Through Hole
N-Channel
1 Channel
650 V
36 A
80 mOhms
- 25 V, 25 V
4.75 V
55 nC
- 55 C
+ 150 C
250 W
Enhancement
MDmesh
Tube
品牌: STMicroelectronics
產品類型: MOSFETs
原廠包裝數量: 1000
子類別: Transistors
每件重量: 2 g
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所選屬性: 0

CNHTS:
8541290000
USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99

STP50N60DM6 MDmesh™ DM6 Power MOSFET

STMicroelectronics STP50N60DM6 MDmesh™ DM6 Power MOSFET is a high-voltage N-channel power MOSFET with extremely high dv/dt ruggedness. This power MOSFET is a fast-recovery body diode that is Zener-protected and 100% avalanche-tested. The STMicroelectronics STP50N60DM6 power MOSFET offers low gate charge, low input capacitance, low resistance, and lower RDS(on) per area compared to the previous generation. This MOSFET combines very low recovery charge (Qrr), recovery time (trr), and excellent improvement in RDS(on) per area with one of the most effective switching behavior. The STP50N60DM6 MDmesh DM6 power MOSFET is ideal for switching applications.