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6ED2230S12TXUMA1

Name: Infineon 6ED2230S12TXUMA1
Brand: Infineon Technologies
SKU: 726-6ED2230S12TXUMA1
Price: 167.06 TWD
Availability: InStock

影像僅供參考
請參閱產品規格

Mouser 編號：

726-6ED2230S12TXUMA1

製造商編號：

6ED2230S12TXUMA1

製造商：

Infineon Technologies

說明：

閘極驅動器 1200V, 0.65A 3-Phase BSD, OCP, EN & FAUL

規格書:

6ED2230S12TXUMA1 規格書 (PDF)

ECAD模型:

下載免費的庫載入器，為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 1,960

庫存：: 1,960 可立即送貨

發生意外錯誤了。請稍後再試。
工廠前置作業時間：: 45 週工廠預計生產時間數量大於所顯示的數量。

輸入數量：

最少： 1 多個： 1

單價:

NT$-.--

總價:

NT$-.--

估計關稅:

Pricing (TWD)

數量	單價	總價
	NT$167.06	NT$167.06
	NT$126.55	NT$1,265.50
	NT$114.72	NT$2,868.00
	NT$96.44	NT$9,644.00
	NT$95.36	NT$23,840.00
	NT$93.93	NT$46,965.00
完整捲（訂購多個1000）
	NT$88.55	NT$88,550.00

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商品屬性	屬性值	選擇屬性
製造商:	Infineon
產品類型:	閘極驅動器
RoHS:
產品:	IGBT, MOSFET Gate Drivers
類型:	High-Side, Low-Side
安裝風格:	SMD/SMT
封裝/外殼:	DSO-24
驅動器數:	6 Driver
輸出數:	6 Output
輸出電流:	650 mA
電源電壓 - 最小值:	13 V
電源電壓 - 最大值:	20 V
配置:	Inverting
上升時間:	35 ns
下降時間:	20 ns
最低工作溫度:	- 40 C
最高工作溫度:	+ 125 C
系列:	Infineon SOI
封裝:	Reel
封裝:	Cut Tape
品牌:	Infineon Technologies
邏輯類型:	CMOS
最長斷開延遲時間:	600 ns
最長接通延遲時間:	600 ns
濕度敏感:	Yes
運作供電電流:	175 uA
Pd - 功率消耗 :	1.3 W
產品類型:	Gate Drivers
傳輸延遲 - 最大值:	900 ns
關機:	Shutdown
原廠包裝數量:	1000
子類別:	PMIC - Power Management ICs
技術:	Si
公司名稱:	EiceDRIVER
零件號別名:	6ED2230S12T SP001656578
每件重量:	807.300 mg

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所選屬性: 0

篩選文檔:

規格書

6ED2230S12TXUMA1 規格書 (PDF)

Product Catalogs

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合規守則

CNHTS:: 8542399000
USHTS:: 8542310075
ECCN:: EAR99

原產地分類

原產國:: 馬來西亞
封裝原產國:: 印度尼西亞
擴散國:: 馬來西亞

出貨時，國家可能會有所變更。

6ED223xS12T EiceDRIVER™ Gate Driver ICs

Infineon Technologies 6ED223xS12T EiceDRIVER™ Level Shift Gate Driver ICs are high voltage (up to 1200V), high-speed insulated-gate bipolar transistors (IGBTs) with three independent high-side and low-side referenced output channels for three-phase applications. Proprietary HVIC and latch-immune CMOS technologies enable a ruggedized monolithic construction. Logic input is compatible with standard CMOS or TTL outputs, down to 3.3V logic. This resistor can also derive an over‐current protection (OCP) function that terminates all six outputs.

1200V Level-Shift Gate Drivers

Infineon 1200V Level-Shift Gate Drivers for Industrial Drives include 3-phase, half-bridge, and high and low side drivers suitable for IGBTs or MOSFETs. The 6ED2230S12T 3-phase 1200V SOI driver with integrated Bootstrap Diode (BSD) and overcurrent protection utilizes Infineon's unique Silicon-on-Insulator (SOI) level-shift technology. The 6ED2230S12T provides functional isolation with industry-leading negative VS robustness. It also provides reduced level-shift losses with the integrated bootstrap diode enabling a lower bill of material cost and smaller PCB footprint.

EiceDRIVER™ Gate Driver ICs

Infineon EiceDRIVER™ Gate Driver ICs are designed for MOSFETs, IGBTs, SiC MOSFETs, and GaN HEMTs devices. EiceDRIVER™ gate drivers provide a wide range of typical output current options, from 0.1A up to 10A. These devices have robust gate drive protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and over current protection. These features make these driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN™, and CoolSiC™. That’s why Infineon offers more than 500 EiceDRIVER™ gate driver IC solutions suitable for any power switch, and any application.