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FF8MR12W1M1HB11BPSA1

Name: Infineon FF8MR12W1M1HB11BPSA1
Brand: Infineon Technologies
SKU: 726-FF8MR12W1M1HB11B
Price: 3821.94 TWD
Availability: InStock

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Mouser 編號：

726-FF8MR12W1M1HB11B

製造商編號：

FF8MR12W1M1HB11BPSA1

製造商：

Infineon Technologies

說明：

離散半導體模組 CoolSiC MOSFET half-bridge module 1200 V

規格書:

FF8MR12W1M1HB11BPSA1 規格書 (PDF)

ECAD模型:

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庫存量: 402

庫存：: 402 可立即送貨

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工廠前置作業時間：: 10 週工廠預計生產時間數量大於所顯示的數量。

輸入數量：

最少： 1 多個： 1

單價:

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總價:

NT$-.--

估計關稅:

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Pricing (TWD)

數量	單價	總價
	NT$3,821.94	NT$3,821.94
	NT$3,210.62	NT$32,106.20
	NT$2,893.40	NT$347,208.00

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商品屬性	屬性值	選擇屬性
製造商:	Infineon
產品類型:	離散半導體模組
RoHS:
類型:	Half Bridge
技術:	Si
封裝:	Tray
品牌:	Infineon Technologies
產品類型:	Discrete Semiconductor Modules
原廠包裝數量:	24
子類別:	Discrete and Power Modules
公司名稱:	EasyDUAL
零件號別名:	FF8MR12W1M1H_B11 SP005634498

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篩選文檔:

規格書

FF8MR12W1M1HB11BPSA1 規格書 (PDF)

CNHTS:: 8504409100
CAHTS:: 8541210000
USHTS:: 8541210095
JPHTS:: 854121000
TARIC:: 8541210000
MXHTS:: 8541210100
ECCN:: EAR99

Reliable & Efficient Power Supply for Data Centers

Infineon Technologies Reliable and Efficient Power Supply for Data Centers are scalable solutions with power ratings from approximately 5kW to 50/60kW. This Infineon solution is ideal for uninterruptible power supplies (UPS) that require high power density and energy efficiency. These modules leverage various chip technologies, including Si IGBT, CoolSiC™ hybrid, and CoolSiC MOSFET, to meet diverse requirements for cost-effectiveness and performance. Infineon's portfolio addresses all system levels of a UPS with different voltage classes, and are set to expand offerings to include lower power rating classes.

EasyDUAL™ 1B IGBT Modules

Infineon Technologies EasyDUAL™ 1B IGBT Modules with CoolSiC™ MOSFETs deliver very low stray inductance and outstanding efficiency enabling higher frequencies, increased power density, and reduced cooling requirements. The 1200V, 8mΩ half-bridge modules feature an integrated NTC temperature sensor and PressFIT contact technology. Thermal interface material is available on the xHP_B11 variants. These devices feature 0 to 5V and +15V to +18V recommended gate drive voltage ranges, maximum gate-source voltages of +23V or -10V, and 17mΩ or 33mΩ drain-source on resistance options. Integrated mounting clamps provide rugged mounting assurance.