最新離散半導體 – Mouser 臺灣

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分離式半導體的類型

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已用篩選:

製造商 = IXYS 回到產品標籤以修改您當前的篩選器。

IXYS X4-Class 功率MOSFET

02/02/2026

- Offer low on-state resistance and conduction losses, with improved efficiency.

IXYS DP高壓快速恢復二極體

01/20/2026

- 600V or 1200V Schottky diodes with low reverse leakage current and fast recovery time.

IXYS MMIX1T500N20X4 200V X4-Class功率MOSFET

10/08/2025

- Ceramic-based isolated package improves overall Rth(j-s) and power handling capability.

IXYS IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs

09/19/2025

- These devices have a high blocking voltage with low on-state resistance [RDS(ON)].

IXYS IXSJxN120R1K 1200V SiC Power MOSFETs

08/27/2025

- Up to 1200V blocking voltage with 18mΩ or 36mΩ low RDS(on).

IXYS Dx系列汽車矽整流器

04/14/2025

- Features glass-passivated junctions, ensuring stable operation and high reliability.

IXYS DCK SiC SCHOTTKY二極體

04/03/2025

- Features high-frequency operation and high surge current capability.

IXYS MCMA140PD1800TB可控矽二極體模組

03/25/2025

- 140A diode module, integrated with a planar passivated chip and offers long-term stability.

IXYS IXFP34N65X2W 功率金氧半場效電晶體

03/17/2025

- 650V, 100mΩ, X2 Class HiPerFET™ power MOSFET with N-channel enhancement mode.

IXYS IXSA80N120L2-7 SiC MOSFET

03/06/2025

- Single-switch MOSFET that features 1200V, 30mΩ, 79A industrial-grade device in a TO263-7L package.

IXYS IXSA40N120L2-7 SiC MOSFET

03/06/2025

- Single-switch MOSFET that features 1200V, 80mΩ, 41A industrial-grade device in a TO263-7L package.

IXYS IXFH34N65X2W功率金氧半場效電晶體

02/27/2025

- 650V, 100mΩ, X2 Class HiPerFET™ power MOSFET with N-channel enhancement mode.

IXYS IXFH46N65X2W功率金氧半場效電晶體

02/27/2025

- 650V, 69mΩ, X2 Class HiPerFET™ power MOSFET with N-channel enhancement mode.

IXYS IXSH80N120L2KHV SiC MOSFET

02/18/2025

- 1200V, 30mΩ, and 79A MOSFET, recommended for use in industrial switch mode power supplies.

IXYS IXSH40N120L2KHV SiC MOSFET

02/18/2025

- 1200V, 80mΩ, and 41A MOSFET, recommended for use in industrial switch mode power supplies.

IXYS IXTNx00N20X4 miniBLOC MOSFETs

11/28/2024

- Offers a 200V voltage rating, 340A to 500A current range, and an SOT-227B package.

IXYS DPF100C1200HB 1200V, 2x 50A Fast Recovery Diodes

11/22/2024

- Two general-purpose power switching diodes in a common-cathode configuration and a TO-247 package.

IXYS Gen5 XPT IGBT

07/25/2024

- Offers a rated voltage of 650V, a current range of 35A to 220A, and a low gate charge.

IXYS DPF30U200FC 200V 30A 3-Phase Bridge Rectifier

07/22/2024

- This device is commonly used as a rectifier in Switch Mode Power Supplies (SMPS).

IXYS DSEP60-06AZ 600V 60A Fast Recovery Diode

07/08/2024

- A high-performance, low-loss, soft-recovery single diode in a TO-268AA (D3PAK-HV) package.

IXYS SRU6008DS2RP Sensitive SCR

02/19/2024

- A 600V high forward blocking SCR, ideal for high voltage capacitor discharge applications.

IXYS MPA 95-06DA FRED Modules

01/18/2024

- Features planar passivated chips and low switching loss for high-frequency switching devices.

IXYS MCMA140P1600TA-NI Thyristor Modules

01/18/2024

- Features planar passivated chips and direct copper-bonded AI2O3-ceramic for line frequency.

IXYS DMA80I1600HA Single-Diode Rectifiers

08/11/2022

- Features planar passivated chips, low leakage current, and low forward voltage drop.

IXYS STS802U2SRP 1.5A Sensitive Dual SCRs

08/10/2022

- Offers a high static dv/dt with a low turn-off (tq) time and up to 20A surge capability.

檢視：1 - 25，共27項

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onsemi NVBYST0D8N08X Single N-Channel Power MOSFET

04/14/2026

- Optimized for high‑voltage operation and withstands fast switching and high-current stresses.

ROHM Semiconductor High-Density SiC Power Modules

04/10/2026

- TRCDRIVE pack™, DOT-247, and HSDIP20 packages contribute to high-performance power conversion.

Vishay RS07x快速恢復型整流器

04/07/2026

- Glass-passivated surface-mount rectifiers with a maximum VRRM between 100V and 800V.

iDEAL Semiconductor IS20M8R0S1P SuperQ™ 200V N-Channel Power MOSFET

04/07/2026

- Low switching losses, high short-circuit withstand capability (SCWC), and comes in a TO-220 package.

Vishay S07x-M標準恢復型高壓整流器

04/07/2026

- Glass-passivated surface-mount rectifiers with a maximum VRRM between 100V and 1000V.

onsemi NTMFD0D9N02P1E MOSFET

04/06/2026

- Dual N-channel MOSFET designed with low Rg for fast switching applications.

Vishay VS-HOT200C080 200A 80V功率金氧半場效電晶體模組

04/02/2026

- This device reduces board space requirements by up to 15% compared to standard discrete solutions.

Taiwan Semiconductor SMA6FxCAH/SMA6SxCAH TVS Diodes

04/02/2026

- AEC-Q101 qualified 600W, 12V to 60V surface-mount devices operating at 0.094%/°C maximum VBR.

Taiwan Semiconductor SMF4LxCA/AH Transient Voltage Suppressor Diodes

04/02/2026

- High-efficiency, low-power, 400W, 5V to 75V surface-mount devices ideal for automated placement.

Toshiba N-Channel/P-Channel Power MOSFETs

03/31/2026

- Ideal for high-speed switching, power management switches, DC-DC converters, and motor drivers.

STMicroelectronics STL059N4S8AG Power MOSFET

03/31/2026

- A 40V N-channel enhancement mode Power MOSFET designed in Smart STripFET F8 technology.

Infineon Technologies Multi-Purpose Diodes for ESD Protection

03/27/2026

- Offering the best protection in a small footprint, the diodes deliver superior ESD performance.

Infineon Technologies OptiMOS™ 6 60V Power MOSFETs

03/27/2026

- Delivers superior performance to OptiMOS 5 via robust power MOSFET technology.

Infineon Technologies N-Channel OptiMOS™ 7 25V Power MOSFETs

03/27/2026

- Application-optimized performance, enabling peak performance for data centers, servers, & AI.

iDEAL Semiconductor iS20M6R3S1P SuperQ™ 200V N-Channel Power MOSFET

03/24/2026

- Delivers ultra-low conduction and switching losses in a robust TO-220 package.

RECOM Power RVS002 Micropower Isolated Power Bridge Rectifier

03/24/2026

- Designed for micro-power isolated power supply applications in space-constrained environments.

Renesas Electronics TP65B110HRU Bi-Directional Switch (BDS)

03/20/2026

- 650V and 110mΩ normally-off Gallium Nitride (GaN) BDS in a compact TOLT package.

Vishay XFD11K XClampR® Transient Voltage Suppressors

03/18/2026

- Surface-mount bidirectional devices designed for high-temperature stability and high reliability.

Vishay T3KN12CA thru T3KN100CA PAR® TVS

03/18/2026

- TVSs are bidirectional, 3000W peak-pulse-power devices ideal for automated placement.

Infineon Technologies OptiMOS™ 8 Power MOSFETs

03/17/2026

- These are N-channel, normal level 80V or 100V MOSFETs with very low on-resistance [RDS(ON)].

ROHM Semiconductor BST400D12P4A1x1 TRCDRIVE pack™ with Molded Modules

03/17/2026

- Features 1200V rated voltage in 41.6mm × 52.5mm package and integrates 4th Generation SiC MOSFETs.

Infineon Technologies Medium-Voltage CoolGaN™ Bidirectional Switches

03/17/2026

- These devices are a great fit for serving as battery disconnect switches in various applications.

onsemi NVMFD5873NL Dual N-Channel Power MOSFETs

03/13/2026

- Designed for compact and efficient designs, including high thermal performance.

Diodes Incorporated DTHP60B07PT 60A Hyper-Fast Planar Rectifiers

03/13/2026

- Features a 650V reverse voltage, low forward voltage drop, and ultra-fast reverse recovery time.

Micro Commercial Components (MCC) BAT46L2 Schottky Diode

03/12/2026

- 150mW small-signal Schottky diode designed for high‑speed switching applications.

檢視：1 - 25，共1228項

分離式半導體的類型

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