最新離散半導體 – Mouser 臺灣

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分離式半導體的類型

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已用篩選:

製造商 = onsemi 回到產品標籤以修改您當前的篩選器。

onsemi GaNEXUS™ GaN FETs

07/08/2026

- Wide-bandgap material properties for low gate & output charge, fast switching & enhanced efficiency.

onsemi NVBYST0D8N08X Single N-Channel Power MOSFET

04/14/2026

- Optimized for high‑voltage operation and withstands fast switching and high-current stresses.

onsemi NTMFD0D9N02P1E MOSFET

04/06/2026

- Dual N-channel MOSFET designed with low Rg for fast switching applications.

onsemi NVMFD5873NL Dual N-Channel Power MOSFETs

03/13/2026

- Designed for compact and efficient designs, including high thermal performance.

onsemi NVBYST0D6N08X 80V N-Channel Power MOSFET

12/26/2025

- This device offers a low QRR and soft recovery body diode in a TCPAK1012 (TopCool) package.

onsemi NVMFD5877NL雙N通道MOSFET

12/19/2025

- 專為緊湊且高效的設計而設計，包括高熱性能。

onsemi NxT2023N065M3S EliteSiC MOSFETs

12/04/2025

- Feature low effective output capacitance and ultra-low gate charge.

onsemi NTTFS007P02P8 P-Channel Low/Medium Voltage MOSFET

11/25/2025

- Built using PowerTrench technology for extremely low RDS(on) switching performance and ruggedness.

onsemi FDC642P-F085 Small Signal MOSFET

11/25/2025

- Offers a high-performance trench technology for extremely low RDS(on) and fast switching speed.

onsemi NVD6824NL Single N-Channel MOSFETs

11/20/2025

- Offer low RDS(on) to minimize conduction losses and high current capability.

onsemi NVD5867NL Single N-Channel Power MOSFET

11/20/2025

- Features 60V drain-to-source voltage, 39mΩ drain-to-source on resistance, and AEC-Q101 qualified.

onsemi NVMFS5832NL Single N-Channel Power MOSFET

11/19/2025

- High-performance MOSFET designed for low-voltage applications requiring efficient power switching.

onsemi AFGB30T65RQDN IGBT

11/19/2025

- Offers a high figure of merit with low conduction and switching losses.

onsemi NZ8P齊納保護二極體

11/19/2025

- 旨在保護敏感電子元件免受ESD和瞬態電壓事件的影響。

onsemi NVMFS5830NL Single N-Channel Power MOSFET

11/19/2025

- High-efficiency single n-channel power MOSFET designed for demanding power management applications.

onsemi NVMFWS0D4N04XM Single N-Channel Power MOSFETs

11/16/2025

- Available in a 5mm x 6mm SO8-FL package with a compact design and are AEC-Q101 qualified.

onsemi NTK3139P P-Channel Single Power MOSFET

10/14/2025

- Comes in a package with a 44% smaller footprint and is 38% thinner than an SC-89 package.

onsemi NVNJWS200N031L單N通道功率MOSFET

10/14/2025

- 該設備具備低RDS(on) 與低閘極臨界電壓，並採用可潤濕側邊。

onsemi AFGH4L60T120RWx-STD N-Channel Field Stop VII IGBTs

10/13/2025

- The device offers good performance, with low on-state voltage and low switching losses.

onsemi AFGBG70T65SQDC N-Channel Field Stop IV IGBT

10/13/2025

- The device offers optimal performance with both low conduction and switching losses.

onsemi T10 Low/Medium Voltage MOSFETs

10/06/2025

- Single N-channel MOSFETs in 40V and 80V with improved performance and enhanced system efficiency.

onsemi MMQA/SZMMQA ESD Protection Diodes

09/23/2025

- These devices are designed for applications requiring transient overvoltage protection capability.

onsemi NSBAMXW PNP Bias Resistor Transistors

09/09/2025

- Designed to replace a single device and the related external resistor bias network.

onsemi NSBCMXW NPN Bias Resistor Transistors

09/08/2025

- Designed to replace a single device and the related external resistor bias network.

onsemi NTK3134N Single N-Channel Power MOSFETs

09/08/2025

- Robust 20V, 890mA N-Channel Power MOSFETs optimized for high-efficiency switching applications.

檢視：1 - 25，共218項

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IXYS DK010S3ARP 1000V 10A整流器

07/20/2026

- Features glass-passivated junctions for enhanced stability and is assembled in a DO-214AB package.

IXYS DK610S3RP 1600V通用整流器二極體

07/20/2026

- Space-saving, ideal for automated assembly, and well-suited for DC phase-control applications.

onsemi GaNEXUS™ GaN FETs

07/08/2026

- Wide-bandgap material properties for low gate & output charge, fast switching & enhanced efficiency.

Bourns CDDFN2表面黏著TVS二極體

07/07/2026

- ESD, EFT, and surge protection for external ports of electronic devices, limiting critical damage.

Semtech RCLAMP2891PQ TVS Diode

06/30/2026

- Ultra-low capacitance 1-line, 28V TVS diode, protects high‑speed signal lines from ESD and EOS.

Diotec Semiconductor SI02C120SMA Silicon Carbide (SiC) Schottky Diode

06/29/2026

- Offers a repetitive reverse voltage rating of 1200V and a forward current capability of 2A.

Littelfuse TVS SPA二極體陣列

06/26/2026

- TVS diode arrays for ESD, EFT, and surge protection across data and power interfaces.

Bourns CDSOD323-T24LC-Q Automotive-Grade TVS Diodes

06/26/2026

- Bidirectional automotive-grade TVS diodes in a compact SOD-323 package.

Bourns CDSOD323-TxxSC-Q TVS Diodes

06/25/2026

- Offer a selection of voltage options from 3V to 36V in a bidirectional configuration.

Diodes Incorporated D3V3ZF1BD2CSP Bi-Directional TVS Diode

06/22/2026

- Low-capacitance device designed specifically to protect high-speed differential lines.

Vishay MXP075 MaxSiC® 750V N-Channel MOSFETs

06/19/2026

- Features a 750V drain-source voltage, a fast switching speed & a 3μs short-circuit withstand time.

Navitas Semiconductor 3300V & 2300V Silicon Carbide (SiC) MOSFETs

06/18/2026

- Based on latest GeneSiC™ trench-assisted planar (TAP) technology, offers flexible packaging formats.

Infineon Technologies EasyPACK™ S Modules

06/12/2026

- Efficient power conversion in a compact, easy-to-integrate package built for modern power designs.

Infineon Technologies OptiMOS™ 7 100V Automotive Power MOSFETs

05/27/2026

- Advanced N‑channel devices engineered for high-efficiency power switching.

Texas Instruments 2N7002L 6V N-channel MOSFETs

05/18/2026

- Designed to minimize the on-state resistance while maintaining fast switching performance.

Bourns CDSOT23-SM712-Q Surface-Mount TVS Diode

05/12/2026

- Provides protection for data ports in accordance with IEC 61000-4-2, IEC 61000-4-4, & IEC 61000-4-5.

Infineon Technologies CIPOS™ Prime車用CoolSiC™功率模組

05/06/2026

- Power Modules are designed for high performance in xEV applications.

Littelfuse AK-FL 瞬時電壓抑壓二極體

05/04/2026

- Axial leaded, FlatSuppressX™ flat and low clamping bi-directional TVS diodes.

Littelfuse TP1KSMB-FL FlatSuppressX™ TVS二極體

05/04/2026

- Designed specifically to protect sensitive electronic equipment from voltage transients.

Littelfuse TP5.0SMD-FL FlatSuppressX™ TVS二極體

05/04/2026

- 5000W peak pulse power capability using a 10/1000µs waveform and 6.5W power dissipation.

Littelfuse QVx35xHx High-Temperature Alternistor TRIACs

04/24/2026

- Offers a 35A rated current and is available in TO-220AB, TO-220 isolated, and TO-263 packages.

Littelfuse SJx08x High-Temperature SCRs

04/24/2026

- Voltage of up to 800V, surge current capability of up to 100A, & a temperature rating of +150°C.

RECOM Power IC、變壓器和分立式解決方案

04/24/2026

- 提供適合能源、工業和醫療應用的元件。

Diotec Semiconductor BAS70-05W Schottky Diode

04/16/2026

- Designed for high‑speed switching and voltage clamping in space‑constrained applications.

onsemi NVBYST0D8N08X Single N-Channel Power MOSFET

04/14/2026

- Optimized for high‑voltage operation and withstands fast switching and high-current stresses.

檢視：1 - 25，共1190項

分離式半導體的類型

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