FF300R12ME7B11BPSA1

Infineon Technologies
726-FF300R12ME7B11BP
FF300R12ME7B11BPSA1

製造商：

說明：
IGBT 模組 1200 V, 300 A dual IGBT module

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庫存量: 25

庫存：
25 可立即送貨
工廠前置作業時間：
14 週 工廠預計生產時間數量大於所顯示的數量。
最少： 1   多個： 1
單價:
NT$-.--
總價:
NT$-.--
估計關稅:
此產品免費航運

Pricing (TWD)

數量 單價
總價
NT$3,573.40 NT$3,573.40
NT$3,408.84 NT$34,088.40

商品屬性 屬性值 選擇屬性
Infineon
產品類型: IGBT 模組
RoHS:  
IGBT Silicon Modules
Dual
1.2 kV
1.5 V
300 A
100 nA
- 40 C
+ 175 C
Tray
品牌: Infineon Technologies
組裝國家: HU
擴散國: AT
原產國: AT
產品類型: IGBT Modules
原廠包裝數量: 10
子類別: IGBTs
技術: Si
公司名稱: EconoDUAL
零件號別名: FF300R12ME7_B11 SP005418163
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所選屬性: 0

規格書

Product Catalogs

CNHTS:
8504409100
USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99

EconoDUAL™ 3 IGBT Modules

Infineon Technologies EconoDUAL™ 3 IGBT Modules are a solution for many applications requiring reliable, cost-effective power electronics. The Infineon Technologies EconoDUAL 3 can support currents ranging from 100A to 900A at various voltages, including 600V, 650V, 1200V, and 1700V. The device is equipped with state-of-the-art IGBT7 or IGBT4 technologies. The modules offer exceptional power density and cycling capability, and the symmetrical design allows for optimized current sharing between IGBT half bridges. This feature makes them ideal for parallel operation. EconoDUAL 3 is a versatile and efficient option for electric vehicles, renewable energy, or general-purpose drives.

High Efficiency 25V Integrated Power Stages

Infineon Technologies High-Efficiency 25V Integrated Power Stages combines advanced low voltage MOSFET technology with innovative driver designs. The Power Stages are integrated into proven multichip PQFN packages and offer a high-efficiency device for managing processor power. Driver technology, FET technology, and package technology integration demonstrate the powerful combination of Infineon's and International Rectifier's capabilities. The power stages in this portfolio are available in industry standard 5x6 footprints with various current ratings, covering high-end and price-performance requirements.

IGBT7 E7 TRENCHSTOP™ Dual Configuration Modules

Infineon Technologies IGBT7 E7 TRENCHSTOP™ Dual Configuration Modules are based on micro-pattern trench technology that reduces losses and offers high controllability. The cell concept is characterized by implementing parallel trench cells separated by sub-micron mesas in contrast to square trench cells. A specially optimized chip for industrial drive applications and solar energy systems provides low static losses, high power density, and soft switching. With a +175°C maximum operating temperature, the modules allow a significant increase in power density.

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