BGB 741L7ESD E6327

Infineon Technologies
726-BGB741L7ESDE63
BGB 741L7ESD E6327

製造商:

說明:
RF放大器 RF BIP TRANSISTORS

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 14,534

庫存:
14,534
可立即送貨
在途量:
15,000
預期2026/4/16
工廠前置作業時間:
12
工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
NT$-.--
總價:
NT$-.--
估計關稅:
包裝:
完整捲(訂購多個7500)

Pricing (TWD)

數量 單價
總價
零卷 / MouseReel™
NT$34.00 NT$34.00
NT$29.10 NT$291.00
NT$27.20 NT$680.00
NT$25.16 NT$2,516.00
NT$23.80 NT$5,950.00
NT$22.61 NT$11,305.00
NT$21.69 NT$21,690.00
NT$21.62 NT$86,480.00
完整捲(訂購多個7500)
NT$18.87 NT$141,525.00
† NT$215.00 MouseReel™費用將加入您的購物車內並自動計算。所有MouseReel™訂單均不能取消和不能退換。

商品屬性 屬性值 選擇屬性
Infineon
產品類型: RF放大器
RoHS:  
50 MHz to 3.5 GHz
1.8 V to 4 V
10 mA
20 dB
1.05 dB
Low Noise Amplifiers
SMD/SMT
TSLP-7-1
SiGe
- 6.5 dBm
1 dBm
- 55 C
+ 150 C
BGB741L7
Reel
Cut Tape
MouseReel
品牌: Infineon Technologies
通道數: 1 Channel
Pd - 功率消耗 : 120 mW
產品類型: RF Amplifier
原廠包裝數量: 7500
子類別: Wireless & RF Integrated Circuits
試驗頻率: 150 MHz
零件號別名: SP000442946 BGB741L7ESDE6327XT BGB741L7ESDE6327XTSA1
每件重量: 2 mg
找到產品:
若要顯示類似商品,請選取至少一個核選方塊
至少選中以上一個核取方塊以顯示在此類別中類似的產品。
所選屬性: 0

此功能需要啟用JavaScript。

CNHTS:
8542339000
CAHTS:
8541290000
USHTS:
8542330001
JPHTS:
8541290100
KRHTS:
8532331000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

CoolMOS™ N-Channel MOSFETs

Infineon CoolMOS™ N-Channel Power MOSFETs set the standard for high performance and energy efficiency. The Infineon OptiMOS low voltage MOSFET family demonstrates a combination of the industry's lowest on-state resistance and best switching performance in the voltage range from 20V up to 250V. The new OptiMOS 25V and 30V product family sets new standards in power density and energy efficiency for discrete power MOSFETs. These devices are application-specific optimized for power supplies of servers, notebooks, telecom / datacom switches, and more. The revolutionary Infineon CoolMOS power family sets new standards in energy efficiency and is a technology leader in high voltage MOSFETs. The CoolMOS offers a significant reduction of conduction and switching losses and enables high power density and efficiency for superior power conversion systems. CoolMOS C6 / E6 Power MOSFETs combine the advantage of state-of-the-art superjunction devices with the strengths of conventional power semiconductors. Infineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.