MSC025SMA120B

Microchip Technology
494-MSC025SMA120B
MSC025SMA120B

Mfr.:

Description:
SiC MOSFETs MOSFET SIC 1200 V 25 mOhm TO-247
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Learn more about Microchip Technology MSC025SMA120B

Product Attribute Attribute Value Select Attribute
Microchip
Product Category: SiC MOSFETs
RoHS:  
Through Hole
TO-247-3
1 Channel
1.2 kV
113 A
31 mOhms
- 10 V, + 23 V
1.9 V
232 nC
- 55 C
+ 175 C
577 W
Enhancement
Brand: Microchip Technology
Configuration: Single
Fall Time: 25 ns
Packaging: Tube
Product Type: SiC MOSFETS
Rise Time: 15 ns
Factory Pack Quantity: 30
Subcategory: Transistors
Transistor Polarity: N-Channel
Typical Turn-Off Delay Time: 38 ns
Typical Turn-On Delay Time: 63 ns
Unit Weight: 6 g
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Compliance Codes
CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99
Origin Classifications
Country of Origin:
Philippines
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

Silicon Carbide (SiC) MOSFETs

Microchip Technology Silicon Carbide (SiC) MOSFETs offer superior dynamic and thermal performance over conventional Silicon (Si) power MOSFETs. These MOSFETs have low capacitances, low gate charge, fast switching speed, and good avalanche ruggedness. The SiC MOSFETs can stabilize operation at 175°C high junction temperature. These MOSFETs provide high efficiency with low switching losses. The SiC MOSFETs do not require any freewheeling diodes. Typical applications include smart grid transmission and distribution, induction heating and welding, and power supply and distribution.

Silicon Carbide (SiC) Semiconductors

Microchip Technology Silicon Carbide (SiC) Semiconductors are an innovative option for power electronic designers looking to improve system efficiency, smaller form factor, and higher operating temperature in products covering industrial, medical, military/aerospace, aviation, and communication market segments. Microchip's next-generation SiC MOSFETs and SiC Schottky Barrier Diodes (SBDs) are designed with high repetitive Unclamped Inductive Switching (UIS) capability, and its SiC MOSFETs maintain high UIS capability at approximately 10J/cm2 to 15J/cm2 and robust short-circuit protection at 3ms to 5ms. The Microchip Technology SiC SBDs are designed with balanced surge current, forward voltage, thermal resistance, and thermal capacitance ratings at low reverse currents for lower switching loss. In addition, SiC MOSFET and SiC SBD can be paired together for use in modules.

In Stock: 51

Stock:
51 Can Ship Immediately
Factory Lead-Time:
16 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
NT$-.--
Ext. Price:
NT$-.--
Est. Tariff:
This Product Ships FREE

Pricing (TWD)

Qty. Unit Price
Ext. Price
NT$1,404.24 NT$1,404.24
NT$1,246.50 NT$12,465.00
NT$1,123.90 NT$33,717.00
NT$1,084.10 NT$130,092.00

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