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STGFW30H65FB

STMicroelectronics

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See Product Specifications

Mouser #:

511-STGFW30H65FB

Mfr. #:

STGFW30H65FB

Mfr.:

STMicroelectronics

Description:

IGBTs Trench gate field-stop 650 V, 30 A high speed HB series IGBT

Complete Your Design

Lifecycle:

End of Life:

Scheduled for obsolescence and will be discontinued by the manufacturer.

Datasheet:

STGFW30H65FB Datasheet (PDF)

ECAD Model:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	IGBTs
RoHS:
Technology:	Si
Package / Case:	TO-3PF
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.55 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	60 A
Pd - Power Dissipation:	58 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	STGFW30H65FB
Packaging:	Tube
Brand:	STMicroelectronics
Continuous Collector Current Ic Max:	30 A
Gate-Emitter Leakage Current:	250 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	300
Subcategory:	IGBTs
Unit Weight:	7 g

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Attributes selected: 0

Filter Document:

Datasheet

STGFW30H65FB Datasheet (PDF)

EOL

Product Discontinuance Notification (PDF)

PCN

Compliance Codes

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

Origin Classifications

Country of Origin:: Korea, Republic of
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

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In Stock: 599

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Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (TWD)

Qty.	Unit Price	Ext. Price
	NT$140.53	NT$140.53
	NT$91.78	NT$917.80
	NT$66.68	NT$6,668.00
	NT$55.57	NT$33,342.00
	NT$51.62	NT$61,944.00
	NT$48.40	NT$130,680.00

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Mfr.:

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Mfr. #:

STGFW40H65FB

Description:

IGBTs Trench gate field-stop 650 V, 40 A high speed HB series IGBT

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