STPSC10H065DI

STMicroelectronics
511-STPSC10H065DI
STPSC10H065DI

Mfr.:

Description:
SiC Schottky Diodes 650V Pwr Schottky Silicn Carbide Diode
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Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: SiC Schottky Diodes
RoHS:  
Through Hole
TO-220AC-2
Single
22 A
650 V
1.98 V
90 A
85 uA
- 40 C
+ 175 C
STPSC
Tube
Brand: STMicroelectronics
Product Type: SiC Schottky Diodes
Factory Pack Quantity: 1000
Subcategory: Diodes & Rectifiers
Unit Weight: 2.300 g
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Attributes selected: 0

Compliance Codes
CNHTS:
8541100000
CAHTS:
8541100090
USHTS:
8541100080
JPHTS:
854110090
KRHTS:
8541109000
TARIC:
8541100000
MXHTS:
8541100101
ECCN:
EAR99
Origin Classifications
Country of Origin:
Italy
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

Standard Products

STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discretes, and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of STMicroelectronics design aids, including SPICE, IBIS models, and simulation tools, is available to make adding to a design-in easy.

STPSC 650V Schottky Silicon-Carbide Diodes

STMicroelectronics STPSC 650V Schottky Silicon-Carbide Diodes are ultra-high-performance power Schottky diodes. The wide bandgap material allows the design of a Schottky diode structure with a 650V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. These STMicroelectronics devices are especially suited for PFC applications, boosting performance in hard switching conditions. High forward surge capability ensures good robustness during transient phases.

STPSC Schottky Silicon-Carbide Diodes

STMicroelectronics Schottky Silicon-Carbide Diodes take advantage of SiC's superior physical characteristics over standard silicon, with four times better dynamic characteristics and 15% less forward voltage (VF). The low reverse recovery characteristics make ST's silicon-carbide diodes a key contributor to energy savings in SMPS applications and in emerging domains such as solar energy conversion, EV or HEV charging stations. They are also ideal for other applications such as welding equipment and air conditioners. STMicroelectronics SiC product portfolio includes a 20A, 600V diode, housed in a halogen-free TO-247 package, to extend its 4A to 12A, through-hole, and SMD package offer. The second generation, with a 6A, 1200V device, and a 650V series are also available.

In Stock: 1,176

Stock:
1,176 Can Ship Immediately
Factory Lead-Time:
25 Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
NT$-.--
Ext. Price:
NT$-.--
Est. Tariff:

Pricing (TWD)

Qty. Unit Price
Ext. Price
NT$171.00 NT$171.00
NT$88.19 NT$881.90
NT$79.95 NT$7,995.00
NT$65.96 NT$32,980.00
NT$65.61 NT$65,610.00
NT$64.17 NT$128,340.00

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