LMG5200MOFT

Texas Instruments
595-LMG5200MOFT
LMG5200MOFT

Mfr.:

Description:
Gate Drivers 80V GaN Half Bridge Power Stage A 595-LM A 595-LMG5200MOFR

Datasheet:
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Learn more about Texas Instruments LMG5200MOFT

Product Attribute Attribute Value Select Attribute
Texas Instruments
Product Category: Gate Drivers
RoHS:  
Half-Bridge Drivers
High-Side, Low-Side
SMD/SMT
QFM-9
1 Driver
1 Output
10 A
4.75 V
5.25 V
- 40 C
+ 125 C
LMG5200
Reel
Cut Tape
MouseReel
Brand: Texas Instruments
Moisture Sensitive: Yes
Operating Supply Current: 3 mA
Product Type: Gate Drivers
Rds On - Drain-Source Resistance: 15 Ohms
Factory Pack Quantity: 250
Subcategory: PMIC - Power Management ICs
Technology: GaN
Tradename: GaN
Unit Weight: 2.338 g
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Attributes selected: 0

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Compliance Codes
CNHTS:
8542399000
CAHTS:
8542390000
USHTS:
8542390090
MXHTS:
8542399999
ECCN:
EAR99
Origin Classifications
Country of Origin:
Taiwan, China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

Gallium Nitride (GaN)

Texas Instruments Gallium Nitride (GaN) solutions deliver high efficiency, power density, and reliability. The Texas Instruments GaN portfolio consists of controllers, drivers, and regulators that offer reduced power with end-to-end power conversion and 5MHz switching frequencies.

LMG5200 80V GaN Half Bridge Power Stage

Texas Instruments LMG5200 80V GaN Half-Bridge Power Stage provides an integrated power stage solution using enhancement-mode Gallium Nitride (GaN) FETs. The device consists of two 80V GaN FETs driven by one high-frequency GaN FET driver in a half-bridge configuration. GaN FETs provide significant advantages for power conversion as they have near-zero reverse recovery and minimal input capacitance CISS. All of Texas Instruments LMG5200 are mounted on a completely bond-wire free package platform with minimized package parasitic elements. The TTL logic compatible inputs can withstand input voltages up to 12V regardless of the VCC voltage. The proprietary bootstrap voltage clamping technique ensures the gate voltages of the enhancement-mode GaN FETs are within a safe operating range.

Availability

Stock:
0

You can still purchase this product for backorder.

On Order:
402
Expected 3/4/2027
Factory Lead-Time:
16
Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
NT$-.--
Ext. Price:
NT$-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 250)

Pricing (TWD)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
NT$645.66 NT$645.66
NT$512.30 NT$5,123.00
NT$478.96 NT$11,974.00
NT$443.46 NT$44,346.00
Full Reel (Order in multiples of 250)
NT$422.67 NT$105,667.50
NT$411.56 NT$205,780.00
NT$403.31 NT$403,310.00
5,000 Quote
† NT$215.00 MouseReel™ fee will be added and calculated in your shopping cart. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part #:
LMG5200MOFR
Packaging:
Reel, Cut Tape, MouseReel
Availability:
In Stock
Price:
NT$467.48
Min:
1

Similar Product

Texas Instruments LMG5200MOFR
Texas Instruments
Gate Drivers 80V GaN Half Bridge Power Stage 9-QFM -4 A 595-LMG5200MOFT
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