小型訊號功率MOSFET

Infineon Small Signal Power MOSFETs are available in 7 industry-standard package types ranging from the largest SOT-223 down to the smallest SOT-363 measuring 2.1mm x 2mm x 0.9mm. These are offered in single, dual and complementary configurations. They are available in N-Channel, P-Channel or Complementary (both P-Channel and N-Channel within the same package) versions to meet a variety of design requirements. Typical applications for these devices include battery protection, LED lighting, low voltage drives, and DC/DC converters. Each of these Small Signal Power MOSFETs are also qualified to Automotive AEC Q101.
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結果: 55
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (TWD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 技術 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式 資格 封裝

Infineon Technologies MOSFET N-Ch 600V 21mA SOT-23-3 無庫存前置作業時間 31 週
最少: 9,000
倍數: 9,000
: 3,000

Si SMD/SMT SOT-23-3 N-Channel 1 Channel 600 V 21 mA 310 Ohms - 20 V, 20 V 2 V 650 pC - 55 C + 150 C 500 mW Enhancement AEC-Q100 Reel

Infineon Technologies MOSFET N-Ch 20V 2.5A SOT-23-3 無庫存前置作業時間 19 週
最少: 1
倍數: 1
: 3,000

Si SMD/SMT SOT-23-3 N-Channel 1 Channel 20 V 2.5 A 40 mOhms - 12 V, 12 V 950 mV 2.1 nC - 55 C + 150 C 500 mW Enhancement AEC-Q100 Reel, Cut Tape, MouseReel

Infineon Technologies MOSFET N-Ch 30V 2.3A SOT-23-3 無庫存前置作業時間 40 週
最少: 9,000
倍數: 9,000
: 3,000

Si SMD/SMT SOT-23-3 N-Channel 1 Channel 30 V 2.3 A 57 mOhms - 20 V, 20 V 1.6 V 1.5 nC - 55 C + 150 C 500 mW Enhancement AEC-Q100 Reel

Infineon Technologies MOSFET N-Ch 30V 2.3A SOT-23-3 無庫存前置作業時間 40 週
最少: 1
倍數: 1
: 3,000

Si SMD/SMT SOT-23-3 N-Channel 1 Channel 30 V 2.3 A 57 mOhms - 20 V, 20 V 1.6 V 1.5 nC - 55 C + 150 C 500 mW Enhancement AEC-Q100 Reel, Cut Tape, MouseReel

Infineon Technologies MOSFET N-Ch 30V 1.4A SOT-23-3 無庫存前置作業時間 51 週
最少: 12,000
倍數: 12,000
: 3,000

Si SMD/SMT SOT-23-3 N-Channel 1 Channel 30 V 1.4 A 119 mOhms - 20 V, 20 V 1.2 V 600 pC - 55 C + 150 C 500 mW Enhancement AEC-Q100 Reel