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Select	Image	Part #	Mfr.	Description	Datasheet	Availability	Pricing (TWD) Filter the results in the table by unit price based on your quantity.	Qty.	RoHS	ECAD Model	Mounting Style	Package / Case	Number of Channels	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs - Gate-Source Voltage	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Minimum Operating Temperature	Maximum Operating Temperature	Pd - Power Dissipation	Channel Mode	Tradename
	SiC MOSFETs SIC_DISCRETE AIMW120R045M1XKSA1 Infineon Technologies 1: NT$787.27 710In Stock NRND	Mfr. Part # AIMW120R045M1XKSA1 Mouser Part # 726-AIMW120R045M1XKS NRND	Infineon Technologies	SiC MOSFETs SIC_DISCRETE Learn More about Infineon Technologies infineon 1200v automotive coolsic modules	Datasheet	710In Stock	NT$787.27 NT$585.43	Min.: 1 Mult.: 1			Through Hole	TO-247-3	1 Channel	1.2 kV	52 A	59 mOhms	- 7 V, + 20 V	5.7 V	57 nC	- 55 C	+ 175 C	228 W	Enhancement	CoolSiC
	SiC MOSFETs SILICON CARBIDE MOSFET IMW65R027M1HXKSA1 Infineon Technologies 1: NT$524.13 1,701In Stock NRND	Mfr. Part # IMW65R027M1HXKSA1 Mouser Part # 726-IMW65R027M1HXKSA NRND	Infineon Technologies	SiC MOSFETs SILICON CARBIDE MOSFET Learn More about Infineon Technologies infineon coolsic mosfets 650v	Datasheet	1,701In Stock	NT$524.13 NT$315.12 NT$311.18	Min.: 1 Mult.: 1			Through Hole	TO-247-3	1 Channel	650 V	47 A	34 mOhms	- 5 V, + 23 V	5.7 V	62 nC	- 55 C	+ 150 C	189 W	Enhancement	CoolSiC
	SiC MOSFETs SILICON CARBIDE MOSFET IMZA65R048M1HXKSA1 Infineon Technologies 1: NT$373.20 298In Stock NRND	Mfr. Part # IMZA65R048M1HXKSA1 Mouser Part # 726-IMZA65R048M1HXKS NRND	Infineon Technologies	SiC MOSFETs SILICON CARBIDE MOSFET Learn More about Infineon Technologies infineon coolsic mosfets 650v	Datasheet	298In Stock	NT$373.20 NT$214.74 NT$198.97	Min.: 1 Mult.: 1			Through Hole	TO-247-4	1 Channel	650 V	39 A	64 mOhms	- 5 V, + 23 V	5.7 V	33 nC	- 55 C	+ 150 C	125 W	Enhancement	CoolSiC
	SiC MOSFETs CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package IMBF170R1K0M1XTMA1 Infineon Technologies 1: NT$216.89 24,930On Order	Mfr. Part # IMBF170R1K0M1XTMA1 Mouser Part # 726-IMBF170R1K0M1XTM	Infineon Technologies	SiC MOSFETs CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package Learn More about Infineon Technologies infineon 1700v sic mosfets	Datasheet	24,930On Order On Order Ship Dates Mfr. #: IMBF170R1K0M1XTMA1 Stock: 0 On Order: 1,930 Expected 1/7/2027 23,000 TBD Factory Lead-Time: 53 Weeks	Cut Tape NT$216.89 NT$141.97 NT$106.12 NT$88.91 Reel NT$77.08 MouseReel Available	Min.: 1 Mult.: 1 : 1,000			SMD/SMT	TO-263-7	1 Channel	1.7 kV	5.2 A	1 Ohms	- 10 V, + 20 V	4.5 V	5 nC	- 55 C	+ 175 C	68 W	Enhancement	CoolSiC
	SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-4 package IMZ120R030M1HXKSA1 Infineon Technologies 1: NT$664.66 2,160On Order NRND	Mfr. Part # IMZ120R030M1HXKSA1 Mouser Part # 726-IMZ120R030M1HXKS NRND	Infineon Technologies	SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-4 package	Datasheet	2,160On Order	NT$664.66 NT$506.20 NT$421.95 NT$375.71 NT$350.97	Min.: 1 Mult.: 1			Through Hole	TO-247-4	1 Channel	1.2 kV	56 A	40 mOhms	- 7 V, + 23 V	5.7 V	63 nC	- 55 C	+ 150 C	227 W	Enhancement	CoolSiC
	SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-3 package IMW120R140M1HXKSA1 Infineon Technologies 1: NT$296.84 978On Order NRND	Mfr. Part # IMW120R140M1HXKSA1 Mouser Part # 726-IMW120R140M1HXKS NRND	Infineon Technologies	SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-3 package	Datasheet	978On Order	NT$296.84 NT$183.19 NT$169.21 NT$134.44	Min.: 1 Mult.: 1			Through Hole	TO-247-3	1 Channel	1.2 kV	19 A	182 mOhms	- 7 V, + 23 V	3.5 V	13 nC	- 55 C	+ 175 C	94 W	Enhancement	CoolSiC
	SiC MOSFETs SILICON CARBIDE MOSFET IMZA65R072M1HXKSA1 Infineon Technologies 1: NT$314.05 Non-Stocked Lead-Time 52 Weeks NRND	Mfr. Part # IMZA65R072M1HXKSA1 Mouser Part # 726-IMZA65R072M1HXKS NRND	Infineon Technologies	SiC MOSFETs SILICON CARBIDE MOSFET Learn More about Infineon Technologies infineon coolsic mosfets 650v	Datasheet	Non-Stocked Lead-Time 52 Weeks	NT$314.05 NT$184.63 NT$153.08 NT$152.36	Min.: 1 Mult.: 1			Through Hole	TO-247-4	1 Channel	650 V	28 A	94 mOhms	- 5 V, + 23 V	5.7 V	22 nC	- 55 C	+ 150 C	96 W	Enhancement	CoolSiC