SiC MOSFETs – Mouser Taiwan

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Automotive-Grade Silicon Carbide Power MOSFETs

STMicroelectronics Automotive-Grade Silicon Carbide Power MOSFETs are developed using ST's advanced and innovative 2nd/3rd generation SiC MOSFET technology. The devices feature low on-resistance per unit area and very good switching performance. The MOSFETs feature a very high operating temperature capability (TJ = +200°C), and a very fast and robust intrinsic body diode.

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Image	Part #	Mfr.	Description	Datasheet	Availability	Pricing (TWD) Filter the results in the table by unit price based on your quantity.	Qty.	Mounting Style	Package / Case	Number of Channels	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs - Gate-Source Voltage	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Minimum Operating Temperature	Maximum Operating Temperature	Pd - Power Dissipation	Channel Mode	Qualification
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package SCT012W90G3-4AG STMicroelectronics 1: NT$871.51 558In Stock	Mfr. Part # SCT012W90G3-4AG Mouser Part # 511-SCT012W90G3-4AG	STMicroelectronics	SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package Learn More about STMicroelectronics stm automotive grade mosfets	Datasheet	558In Stock	NT$871.51 NT$697.64 NT$603.36 NT$571.45 Quote Quote	Min.: 1 Mult.: 1	Through Hole	HiP247-3	1 Channel	900 V	110 A	15.8 mOhms	- 10 V, + 22 V	3.1 V	138 nC	- 55 C	+ 200 C	625 W	Enhancement	AEC-Q101
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package SCT015W120G3-4AG STMicroelectronics 1: NT$993.76 443In Stock	Mfr. Part # SCT015W120G3-4AG Mouser Part # 511-SCT015W120G3-4AG	STMicroelectronics	SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package Learn More about STMicroelectronics stm automotive grade mosfets	Datasheet	443In Stock	NT$993.76 NT$795.51 NT$687.96 NT$651.39 Quote Quote	Min.: 1 Mult.: 1	Through Hole	HiP-247-4	1 Channel	1.2 kV	129 A	15 mOhms	- 18 V, + 18 V	4.2 V	167 nC	- 55 C	+ 200 C	673 W	Enhancement	AEC-Q101
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package SCT020W120G3-4AG STMicroelectronics 1: NT$717.72 175In Stock 600On Order	Mfr. Part # SCT020W120G3-4AG Mouser Part # 511-SCT020W120G3-4AG	STMicroelectronics	SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package Learn More about STMicroelectronics stm automotive grade mosfets	Datasheet	175In Stock 600On Order	NT$717.72 NT$425.18	Min.: 1 Mult.: 1	Through Hole	Hip247-4	1 Channel	1.2 kV	100 A	28 mOhms	- 10 V, + 22 V	3 V	121 nC	- 55 C	+ 200 C	541 W	Enhancement	AEC-Q101
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package SCT040H120G3AG STMicroelectronics 1: NT$476.09 889In Stock	Mfr. Part # SCT040H120G3AG Mouser Part # 511-SCT040H120G3AG	STMicroelectronics	SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package Learn More about STMicroelectronics stm automotive grade mosfets	Datasheet	889In Stock	Cut Tape NT$476.09 NT$354.56 NT$295.76 NT$263.50 Reel NT$245.93	Min.: 1 Mult.: 1 : 1,000	SMD/SMT	H2PAK-7	1 Channel	1.2 kV	40 A	54 mOhms	- 18 V, + 18 V	4.2 V	54 nC	- 55 C	+ 175 C	300 W	Enhancement	AEC-Q101
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package SCT020HU120G3AG STMicroelectronics 1: NT$798.38 18In Stock 1,200Expected 11/4/2026	Mfr. Part # SCT020HU120G3AG Mouser Part # 511-SCT020HU120G3AG	STMicroelectronics	SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package Learn More about STMicroelectronics stm automotive grade mosfets	Datasheet	18In Stock 1,200Expected 11/4/2026	Cut Tape NT$798.38 NT$596.19 NT$515.88 Reel NT$488.28 MouseReel Available	Min.: 1 Mult.: 1 : 600	SMD/SMT	HU3PAK-7	1 Channel	1.2 kV	100 A	28 mOhms	- 10 V, + 22 V	3 V	121 nC	- 55 C		555 W	Enhancement	AEC-Q101
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package SCT025W120G3-4AG STMicroelectronics 1: NT$717.72 14In Stock 1,200On Order	Mfr. Part # SCT025W120G3-4AG Mouser Part # 511-SCT025W120G3-4AG	STMicroelectronics	SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package Learn More about STMicroelectronics stm automotive grade mosfets	Datasheet	14In Stock 1,200On Order	NT$717.72 NT$466.05 NT$412.28 NT$379.29	Min.: 1 Mult.: 1	Through Hole	HiP-247-4	1 Channel	1.2 kV	56 A	37 mOhms	- 18 V, + 18 V	4.2 V	73 nC	- 55 C	+ 200 C	388 W	Enhancement	AEC-Q101
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package SCT025W120G3AG STMicroelectronics 1: NT$679.36 43In Stock 600On Order	Mfr. Part # SCT025W120G3AG Mouser Part # 511-SCT025W120G3AG	STMicroelectronics	SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package Learn More about STMicroelectronics stm automotive grade mosfets	Datasheet	43In Stock 600On Order	NT$679.36 NT$422.67 NT$396.50	Min.: 1 Mult.: 1	Through Hole	HiP247-3	1 Channel	1.2 kV	56 A	37 mOhms	- 10 V, + 22 V	3 V	73 nC	- 55 C	+ 200 C	388 W	Enhancement	AEC-Q101
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package SCT040W120G3AG STMicroelectronics 1: NT$501.54 14In Stock 600On Order	Mfr. Part # SCT040W120G3AG Mouser Part # 511-SCT040W120G3AG	STMicroelectronics	SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package Learn More about STMicroelectronics stm automotive grade mosfets	Datasheet	14In Stock 600On Order	NT$501.54 NT$382.16 NT$318.35 NT$283.93 NT$264.93	Min.: 1 Mult.: 1	Through Hole	HiP-247-3	1 Channel	1.2 kV	40 A	54 mOhms	- 18 V, + 18 V	4.2 V	56 nC	- 55 C	+ 200 C	312 W	Enhancement	AEC-Q101
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A in an HU3PAK package SCT011HU75G3AG STMicroelectronics 1: NT$1,105.26 1,200On Order	Mfr. Part # SCT011HU75G3AG Mouser Part # 511-SCT011HU75G3AG	STMicroelectronics	SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A in an HU3PAK package Learn More about STMicroelectronics stm automotive grade mosfets	Datasheet	1,200On Order On Order Ship Dates Mfr. #: SCT011HU75G3AG Stock: 0 On Order: 600 Expected 7/30/2027 600 Expected 8/6/2027 Factory Lead-Time: 36 Weeks	Cut Tape NT$1,105.26 NT$884.78 NT$765.04 Reel NT$724.53 MouseReel Available	Min.: 1 Mult.: 1 : 600	SMD/SMT	HU3PAK-7	1 Channel	750 V	110 A	15 mOhms	- 10 V, + 22 V	3.2 V	154 nC	- 55 C	+ 175 C	652 W	Enhancement	AEC-Q101
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package SCT016H120G3AG STMicroelectronics 1: NT$966.87 1,985On Order	Mfr. Part # SCT016H120G3AG Mouser Part # 511-SCT016H120G3AG	STMicroelectronics	SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package Learn More about STMicroelectronics stm automotive grade mosfets	Datasheet	1,985On Order On Order Ship Dates Mfr. #: SCT016H120G3AG Stock: 0 On Order: 985 Expected 4/30/2027 1,000 TBD Factory Lead-Time: 25 Weeks	Cut Tape NT$966.87 NT$774.00 NT$669.32 NT$633.83 Reel NT$592.24 MouseReel Available	Min.: 1 Mult.: 1 : 1,000	SMD/SMT	H2PAK-7	1 Channel	1.2 kV	112 A	22 mOhms	- 10 V, + 22 V	3 V	150 nC	- 55 C	+ 175 C	652 W	Enhancement	AEC-Q101
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package SCT025H120G3AG STMicroelectronics 1: NT$658.21 1,997Expected 4/16/2027	Mfr. Part # SCT025H120G3AG Mouser Part # 511-SCT025H120G3AG	STMicroelectronics	SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package Learn More about STMicroelectronics stm automotive grade mosfets	Datasheet	1,997Expected 4/16/2027	Cut Tape NT$658.21 NT$407.61 NT$402.24 Reel NT$371.41	Min.: 1 Mult.: 1 : 1,000	SMD/SMT	H2PAK-7	1 Channel	1.2 kV	55 A	37 mOhms	- 10 V, + 22 V	3 V	73 nC	- 55 C	+ 175 C	375 W	Enhancement	AEC-Q101
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package SCT012H90G3AG STMicroelectronics 1: NT$826.70 998Expected 6/4/2027	Mfr. Part # SCT012H90G3AG Mouser Part # 511-SCT012H90G3AG	STMicroelectronics	SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package Learn More about STMicroelectronics stm automotive grade mosfets	Datasheet	998Expected 6/4/2027	Cut Tape NT$826.70 NT$536.67 NT$535.60 NT$506.20 Reel NT$472.86	Min.: 1 Mult.: 1 : 1,000	SMD/SMT	H2PAK-7	1 Channel	900 V	110 A	12 mOhms	- 18 V, + 18 V	4.2 V	138 nC	- 55 C	+ 175 C	625 W	Enhancement	AEC-Q101
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HU3PAK package SCT040HU120G3AG STMicroelectronics 1: NT$581.13 1,200Expected 3/12/2027	Mfr. Part # SCT040HU120G3AG Mouser Part # 511-SCT040HU120G3AG	STMicroelectronics	SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HU3PAK package Learn More about STMicroelectronics stm automotive grade mosfets	Datasheet	1,200Expected 3/12/2027	Cut Tape NT$581.13 NT$442.75 NT$368.90 Reel NT$328.74 MouseReel Available	Min.: 1 Mult.: 1 : 600	SMD/SMT	HU3PAK-7	1 Channel	1.2 kV	40 A	72 mOhms	- 10 V, + 22 V	3 V	54 nC	- 55 C	+ 175 C	300 W	Enhancement	AEC-Q101
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A SCT040HU65G3AG STMicroelectronics 1: NT$489.71 600Expected 8/20/2027	Mfr. Part # SCT040HU65G3AG Mouser Part # 511-SCT040HU65G3AG	STMicroelectronics	SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A Learn More about STMicroelectronics stm automotive grade mosfets	Datasheet	600Expected 8/20/2027	Cut Tape NT$489.71 NT$373.20 NT$310.82 Reel NT$277.12 NT$262.06 MouseReel Available	Min.: 1 Mult.: 1 : 600	SMD/SMT	H2PAK-2	1 Channel	650 V	7 A	40 mOhms	- 30 V, + 30 V	5 V	36 nC	- 55 C	+ 150 C	266 W	Enhancement	AEC-Q101
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A SCT055HU65G3AG STMicroelectronics 1: NT$485.05 1,800Expected 7/30/2027	Mfr. Part # SCT055HU65G3AG Mouser Part # 511-SCT055HU65G3AG	STMicroelectronics	SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A Learn More about STMicroelectronics stm automotive grade mosfets	Datasheet	1,800Expected 7/30/2027	Cut Tape NT$485.05 NT$313.33 NT$285.72 Reel NT$259.55 MouseReel Available	Min.: 1 Mult.: 1 : 600	SMD/SMT	HU3PAK-7	1 Channel	650 V	30 A	72 mOhms	- 10 V, + 22 V	4.2 V	29 nC	- 55 C	+ 175 C	185 W	Enhancement	AEC-Q101
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package SCT070HU120G3AG STMicroelectronics 1: NT$525.92 599Expected 12/14/2026	Mfr. Part # SCT070HU120G3AG Mouser Part # 511-SCT070HU120G3AG	STMicroelectronics	SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package Learn More about STMicroelectronics stm sctw70n120g2v 1200v sic power mosfet	Datasheet	599Expected 12/14/2026	Cut Tape NT$525.92 NT$361.01 NT$317.99 Reel NT$286.80	Min.: 1 Mult.: 1 : 600	SMD/SMT	HU3PAK-7	1 Channel	1.2 kV	30 A	87 mOhms	- 18 V, + 18 V	4.2 V	37 nC	- 55 C	+ 175 C	223 W	Enhancement	AEC-Q101
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package SCT040W120G3-4 STMicroelectronics 1: NT$490.43 100On Order	Mfr. Part # SCT040W120G3-4 Mouser Part # 511-SCT040W120G3-4	STMicroelectronics	SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package Learn More about STMicroelectronics stm automotive grade mosfets	Datasheet	100On Order	NT$490.43 NT$365.31 NT$304.37 NT$271.38	Min.: 1 Mult.: 1	Through Hole	HiP247-4	1 Channel	1.2 kV	40 A	54 mOhms	- 10 V, + 22 V	3.1 V	56 nC	- 55 C	+ 200 C	312 W	Enhancement	AEC-Q101

Automotive-Grade Silicon Carbide Power MOSFETs

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