GANE7R0/GANE2R7/GANE1R8 100V GaN FETs

Nexperia GANE7R0/GANE2R7/GANE1R8 100V GaN FETs are general-purpose, normally off e-mode devices that deliver superior performance and very low on-state resistance.

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Description Datasheet Availability Pricing (TWD) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package / Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Technology
Nexperia GaN FETs GANE1R8-100QBA/SOT8091/VQFN7
Datasheet
2,457In Stock
Cut Tape
NT$381.09
NT$211.52
NT$200.40
NT$183.55
Reel
NT$163.48
Min.: 1
Mult.: 1
: 2,500
SMD/SMT VQFN-7 P-Channel 1 Channel 100 V 100 A 1.8 mOhms 6 V 2.5 V 22 nC - 40 C + 150 C 65 W Enhancement GaN
Nexperia GaN FETs GANE2R7-100CBA/SOT8089/WLCSP22
Datasheet
1,453In Stock
Cut Tape
NT$209.72
NT$110.06
NT$100.38
NT$90.70
Reel
NT$74.93
View
Min.: 1
Mult.: 1
: 1,500
SMD/SMT WLCSP-22 P-Channel 1 Channel 100 V 64 A 2.7 mOhms 5.5 V 2.5 V 13 nC - 40 C + 150 C 470 W Enhancement GaN
Nexperia GaN FETs GANE7R0-100CBA/SOT8090/WLCSP6
Datasheet
988In Stock
Cut Tape
NT$97.15
NT$47.68
NT$43.02
NT$34.31
Reel
NT$30.19
View
Min.: 1
Mult.: 1
: 1,500
SMD/SMT VQFN-7 N-Channel 1 Channel 100 V 29 A 7 mOhms 6 V 2.5 V 4.5 nC - 40 C + 150 C 182 W Enhancement GaN