N-Channel MDmesh K6 Power MOSFETs

STMicroelectronics N-Channel MDmesh K6 Power MOSFETs are Zener-protected and 100% avalanche-tested. These power MOSFETs feature 800V minimum drain-source breakdown voltage, ±30V gate-source voltage, and -55°C to 150°C operating junction temperature range. The MDmesh K6 Power MOSFETs also feature 5V/ns peak diode recovery voltage slope, 100A/µs peak diode recovery current slope, and 120V/ns MOSFET dv/dt ruggedness. Typical applications include notebook and AIO, flyback converters, adapters for tablets, and LED lighting.

結果: 12
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說明 規格書 供貨情況 定價 (TWD) 基於數量按單價篩選表中結果。
數量 RoHS ECAD模型 技術
安裝風格
封裝/外殼
晶體管極性
通道數
Vds - 漏-源擊穿電壓
Id - C連續漏極電流
Rds On - 漏-源電阻
Vgs - 閘極-源極電壓
Vgs th - 門源門限電壓
Qg - 閘極充電
最低工作溫度
最高工作溫度
Pd - 功率消耗
通道模式
公司名稱
封裝
STMicroelectronics MOSFET N-channel 800 V, 285 mOhm typ., 12 A MDmesh K6 Power MOSFET
規格書
2,389庫存量
可選用MouseReel
最少： 1
倍數： 1
: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 12 A 340 mOhms - 10 V, 10 V 3 V 17.8 nC - 55 C + 150 C 92 W Enhancement Reel, Cut Tape, MouseReel
STMicroelectronics MOSFET N-channel 800 V, 515 mOhm typ., 7 A MDmesh K6 Power MOSFET
規格書
708庫存量
最少： 1
倍數： 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 7 A 600 mOhms - 30 V, 30 V 4 V 10.7 nC - 55 C + 150 C 86 W Enhancement Tube
STMicroelectronics MOSFET N-channel 800 V, 380 mOhm typ., 10 A MDmesh K6 Power MOSFET in a DPAK package
規格書
810庫存量
可選用MouseReel
最少： 1
倍數： 1
: 2,500

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 10 A 450 mOhms - 30 V, 30 V 3 V 17.3 nC - 55 C + 150 C 83 W Enhancement Reel, Cut Tape, MouseReel

STMicroelectronics MOSFET N-channel 800 V, 197 mOhm typ., 16 A MDmesh K6 Power MOSFET
規格書
1,009庫存量
最少： 1
倍數： 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 800 V 16 A 220 mOhms - 30 V, 30 V 3.5 V 25.9 nC - 55 C + 150 C 27 W Enhancement Tube
STMicroelectronics MOSFET N-channel 800 V, 1.0 Ohm typ., 5 A MDmesh K6 Power MOSFET
規格書
997庫存量
最少： 1
倍數： 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 800 V 5 A 1.1 Ohms - 30 V, 30 V 4 V 5.7 nC - 55 C + 150 C 21 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-channel 800 V, 515 mOhm typ., 7 A MDmesh K6 Power MOSFET
規格書
1,038庫存量
最少： 1
倍數： 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 800 V 7 A 600 mOhms - 30 V, 30 V 4 V 10.7 nC - 55 C + 150 C 23 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-channel 800 V, 1.0 Ohm typ., 5 A MDmesh K6 Power MOSFET
規格書
1,055庫存量
最少： 1
倍數： 1

Si Tube
STMicroelectronics MOSFET N-channel 800 V, 400 mOhm typ., 8 A MDmesh K6 Power MOSFET
規格書
169庫存量
最少： 1
倍數： 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 10 A 450 mOhms Enhancement Tube
STMicroelectronics MOSFET N-channel 800 V, 197 mOhm typ., 16 A MDmesh K6 Power MOSFET in a DPAK package
規格書
44庫存量
2,500預期2026/8/3
可選用MouseReel
最少： 1
倍數： 1
: 2,500

Si SMD/SMT N-Channel 1 Channel 800 V 16 A 220 Ohms - 30 V, 30 V 4 V 25.9 nC - 55 C + 150 C 105 W Enhancement Reel, Cut Tape, MouseReel


STMicroelectronics MOSFET N-channel 800 V, 197 mOhm typ., 16 A MDmesh K6 Power MOSFET in a TO-220 package
規格書
58庫存量
1,000在途量
最少： 1
倍數： 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 10 A 220 mOhms - 30 V, 30 V 4 V 25.9 nC - 55 C + 150 C 140 W Enhancement MDmesh Tube
STMicroelectronics MOSFET N-channel 800 V, 285 mOhm typ., 12 A MDmesh K6 Power MOSFET in a TO-220 package
規格書
無庫存前置作業時間 16 週
最少： 1,000
倍數： 1,000

Si Through Hole TO-220-3 1 Channel 800 V 12 A 340 mOhms - 30 V, 30 V 3.5 V - 55 C + 150 C 115 W Enhancement Tube
STMicroelectronics MOSFET N-channel 800 V, 750 mOhm typ., 6 A MDmesh K6 Power MOSFET in a TO-220 package
規格書
無庫存前置作業時間 16 週
最少： 1,000
倍數： 1,000

Si Through Hole TO-220-3 1 Channel 800 V 6 A 900 mOhms - 30 V, 30 V 3.5 V 7 nC - 55 C + 150 C 68 W Enhancement Tube