CoolMOS™ CM8 650V Power MOSFETs

Infineon Technologies CoolMOS™ CM8 650V Power MOSFETs are designed according to the Superjunction (SJ) principle to offer low switching and conduction losses. These MOSFETs are suitable for hard and soft switching topologies due to the devices' commutation ruggedness. The CoolMOS™ CM8 650V MOSFETs feature fast design‑in through low ringing tendency and usage across the PFC and PWM stages. These MOSFETs enable simplified thermal management through an advanced die attach technique. The CoolMOS™ CM8 650V MOSFETs are RoHS compliant and fully qualified as per JEDEC standards for industrial applications. Typical applications include LLC resonant converters, AI servers, telecom power supplies, and data centers.

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說明 規格書 供貨情況 定價 (TWD) 基於數量按單價篩選表中結果。
數量 RoHS ECAD模型 技術
安裝風格
封裝/外殼
晶體管極性
通道數
Vds - 漏-源擊穿電壓
Id - C連續漏極電流
Rds On - 漏-源電阻
Vgs - 閘極-源極電壓
Vgs th - 門源門限電壓
Qg - 閘極充電
最低工作溫度
最高工作溫度
Pd - 功率消耗
通道模式
公司名稱
封裝
Infineon Technologies MOSFET 650V CoolMOS CM8 Power Transistor
規格書
639庫存量
最少： 1
倍數： 1

Si Through Hole PG-TO247-3 N-Channel 1 Channel 650 V 90 A 25 mOhms - 20 V to 20 V 4.7 V 124 nC - 55 C + 150 C 201 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET 650V CoolMOS CM8 Power Transistor
規格書
663庫存量
最少： 1
倍數： 1
: 750

Si SMD/SMT PG-HDSOP-22 N-Channel 1 Channel 650 V 127 A 18 mOhms - 20 V to 20 V 4.7 V 173 nC - 55 C + 150 C 625 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET 650V CoolMOS CM8 Power Transistor
規格書
785庫存量
2,000在途量
最少： 1
倍數： 1
: 2,000

Si SMD/SMT PG-HSOF-8 N-Channel 1 Channel 650 V 101 A 25 mOhms - 20 V to 20 V 4.7 V 124 nC - 55 C + 150 C 543 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET 650V CoolMOS CM8 Power Transistor
規格書
1,429庫存量
960預期2027/4/1
最少： 1
倍數： 1

Si Through Hole PG-TO247-3 N-Channel 1 Channel 650 V 116 A 18 mOhms - 20 V to 20 V 4.7 V 173 nC - 55 C + 150 C 521 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET 650V CoolMOS CM8 Power Transistor
規格書
298庫存量
最少： 1
倍數： 1

Si Through Hole PG-TO247-3 N-Channel 1 Channel 650 V 62 A 70 mOhms - 20 V to 20 V 4.7 V 80 nC - 55 C + 150 C 201 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET 650V CoolMOS CM8 Power Transistor
規格書
185庫存量
最少： 1
倍數： 1

Si Through Hole PG-TO247-4 N-Channel 1 Channel 650 V 116 A 18 mOhms - 20 V to 20 V 4.7 V 173 nC - 55 C + 150 C 521 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET 650V CoolMOS CM8 Power Transistor
規格書
323庫存量
最少： 1
倍數： 1

Si Through Hole PG-TO247-4 N-Channel 1 Channel 650 V 90 A 25 mOhms - 20 V to 20 V 4.7 V 124 nC - 55 C + 150 C 201 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET 650V CoolMOS CM8 Power Transistor
規格書
516庫存量
最少： 1
倍數： 1

Si Through Hole PG-TO247-4 N-Channel 1 Channel 650 V 62 A 40 mOhms - 20 V to 20 V 4.7 V 80 nC - 55 C + 150 C 329 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET 650V CoolMOS CM8 Power Transistor
規格書
167庫存量
480預期2026/8/20
最少： 1
倍數： 1

Si Through Hole PG-TO247-3 N-Channel 1 Channel 650 V 45 A 60 mOhms - 20 V to 20 V 4.7 V 52 nC - 55 C + 150 C 227 W Enhancement CoolMOS Tube
Infineon Technologies MOSFET 650V CoolMOS CM8 Power Transistor
規格書
2,235預期2026/9/3
最少： 1
倍數： 1
: 750

Si SMD/SMT PG-HDSOP-22 N-Channel 1 Channel 650 V 270 A 8 mOhms - 20 V to 20 V 4.7 V 375 nC - 55 C + 150 C 1.249 kW Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies MOSFET 650V CoolMOS CM8 Power Transistor
規格書
2,000預期2027/3/4
可選用MouseReel
最少： 1
倍數： 1
: 2,000

Si SMD/SMT PG-HSOF-8 N-Channel 1 Channel 650 V 134 A 18 mOhms - 20 V to 20 V 4.7 V 173 nC - 55 C + 150 C 694 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFET 650V CoolMOS CM8 Power Transistor
規格書
3,496在途量
最少： 1
倍數： 1
: 2,000

Si SMD/SMT PG-HSOF-8 N-Channel 1 Channel 650 V 67 A 40 mOhms - 20 V to 20 V 4.7 V 80 nC - 55 C + 150 C 390 W Enhancement CoolMOS Reel, Cut Tape