Wolfspeed Silicon Carbide (SiC) 1200V MOSFETs and Diodes offer higher efficiency in demanding environments and are designed for high-power applications. The 1200V SiC MOSFETs feature stable Rds(on) over-temperature and avalanche ruggedness. The MOSFETs are rugged body diodes that do not require external diodes and are easier to drive as these offer a 15V gate drive. The 1200V SiC MOSFETs improve system-level efficiency, lower switching and conduction losses, and improve system-level power density. The 1200V SiC Schottky diodes feature the merged PiN Schottky (MPS) design technology, which is more robust and reliable than typical Schottky barrier diodes. The diodes offer high surge current capability, high-frequency operation, easy parallel operation, and reduced heat sink requirements. The MOSFETs and diodes are ideal for uninterruptible power supplies (UPS), motor control and drives, switched-mode power supplies (SMPS), electric vehicle charging, and high-voltage DC/DC converters.
