Silicon Carbide (SiC) Schottky Barrier Diodes

APC-E Silicon Carbide (SiC) Schottky Barrier Diodes are high-performance semiconductors for power applications. The APC-E SiC Schottky Barrier Diodes offer superior power handling due to high voltage and current ratings, enabling high frequency and high-temperature operation, which boosts power density, efficiency, and system compactness. These diodes feature a reduced capacitive charge (Q_C), which minimizes reverse recovery loss, aiding fast switching. These devices also maintain consistent performance over a broad temperature range, simplifying system design. Merits include low V_F, high surge current, or balanced performance, tailored for PFC, solar inverters, onboard chargers, and EV charging.