|
|
氮化鎵場效應管 Airfast RF Power GaN Transistor, 717-850 MHz, 112 W Avg., 50 V
- A5G07H800W19NR3
- NXP Semiconductors
-
1:
NT$10,310.46
-
65庫存量
-
壽命結束
|
Mouser 元件編號
771-A5G07H800W19NR3
壽命結束
|
NXP Semiconductors
|
氮化鎵場效應管 Airfast RF Power GaN Transistor, 717-850 MHz, 112 W Avg., 50 V
|
|
65庫存量
|
|
|
NT$10,310.46
|
|
|
NT$8,747.04
|
|
|
NT$8,316.12
|
|
|
NT$8,116.44
|
|
|
檢視
|
|
|
NT$7,836.81
|
|
|
NT$7,900.26
|
|
|
NT$7,836.81
|
|
|
報價
|
|
最少： 1
倍數： 1
:
250
|
|
|
SMD/SMT
|
OM-780-4S4S-8
|
125 V
|
- 55 C
|
+ 150 C
|
|
|
|
氮化鎵場效應管 Airfast RF Power GaN Transistor, 1805-1880 MHz, 85 W Avg., 48 V
- A5G18H610W19NR3
- NXP Semiconductors
-
1:
NT$9,457.23
-
213庫存量
-
壽命結束
|
Mouser 元件編號
771-A5G18H610W19NR3
壽命結束
|
NXP Semiconductors
|
氮化鎵場效應管 Airfast RF Power GaN Transistor, 1805-1880 MHz, 85 W Avg., 48 V
|
|
213庫存量
|
|
|
NT$9,457.23
|
|
|
NT$8,022.87
|
|
|
NT$7,627.80
|
|
|
NT$7,444.61
|
|
|
檢視
|
|
|
NT$7,049.54
|
|
|
NT$7,347.10
|
|
|
NT$7,049.54
|
|
|
報價
|
|
最少： 1
倍數： 1
:
250
|
|
|
SMD/SMT
|
OM-780-4S4S-8
|
125 V
|
- 55 C
|
+ 150 C
|
|
|
|
氮化鎵場效應管 Airfast RF Power GaN Transistor, 1930 1995 MHz, 85 W Avg., 48 V
- A5G19H605W19NR3
- NXP Semiconductors
-
1:
NT$9,262.21
-
35庫存量
-
壽命結束
|
Mouser 元件編號
771-A5G19H605W19NR3
壽命結束
|
NXP Semiconductors
|
氮化鎵場效應管 Airfast RF Power GaN Transistor, 1930 1995 MHz, 85 W Avg., 48 V
|
|
35庫存量
|
|
|
NT$9,262.21
|
|
|
NT$7,857.24
|
|
|
NT$7,470.42
|
|
|
NT$7,291.17
|
|
|
檢視
|
|
|
NT$7,039.86
|
|
|
NT$7,096.87
|
|
|
NT$7,039.86
|
|
|
報價
|
|
最少： 1
倍數： 1
:
250
|
|
|
|
|
|
|
|
|
|
|
氮化鎵場效應管 Airfast RF Power GaN Transistor, 2496-2690 MHz, 85 W Avg., 48 V
- A5G26H605W19NR3
- NXP Semiconductors
-
1:
NT$9,727.54
-
2庫存量
-
壽命結束
|
Mouser 元件編號
771-A5G26H605W19NR3
壽命結束
|
NXP Semiconductors
|
氮化鎵場效應管 Airfast RF Power GaN Transistor, 2496-2690 MHz, 85 W Avg., 48 V
|
|
2庫存量
|
|
|
NT$9,727.54
|
|
|
NT$8,252.31
|
|
|
NT$7,846.13
|
|
|
NT$7,657.56
|
|
|
NT$7,453.57
|
|
|
NT$7,394.06
|
|
最少： 1
倍數： 1
:
250
|
|
|
SMD/SMT
|
OM-780-4S4S-8
|
125 V
|
- 55 C
|
+ 150 C
|
|
|
|
氮化鎵場效應管 Airfast RF Power GaN Transistor, 2110-2200 MHz, 85 W Avg., 48 V
- A5G21H605W19NR3
- NXP Semiconductors
-
1:
NT$9,266.51
-
208預期2026/8/13
-
壽命結束
|
Mouser 元件編號
771-A5G21H605W19NR3
壽命結束
|
NXP Semiconductors
|
氮化鎵場效應管 Airfast RF Power GaN Transistor, 2110-2200 MHz, 85 W Avg., 48 V
|
|
208預期2026/8/13
|
|
|
NT$9,266.51
|
|
|
NT$7,861.19
|
|
|
NT$7,474.37
|
|
|
NT$7,294.76
|
|
|
NT$7,200.83
|
|
|
NT$7,043.81
|
|
最少： 1
倍數： 1
:
250
|
|
|
SMD/SMT
|
OM-780-4S4S-8
|
125 V
|
- 55 C
|
+ 150 C
|
|
|
|
氮化鎵場效應管 Airfast RF Power GaN Transistor, 865-960 MHz, 112 W Avg., 50 V
- A5G08H800W19NR3
- NXP Semiconductors
-
1:
NT$10,310.82
-
無庫存前置作業時間 53 週
-
壽命結束
|
Mouser 元件編號
771-A5G08H800W19NR3
壽命結束
|
NXP Semiconductors
|
氮化鎵場效應管 Airfast RF Power GaN Transistor, 865-960 MHz, 112 W Avg., 50 V
|
|
無庫存前置作業時間 53 週
|
|
|
NT$10,310.82
|
|
|
NT$8,747.04
|
|
|
NT$8,316.48
|
|
|
NT$8,116.44
|
|
|
NT$7,976.63
|
|
|
NT$7,581.20
|
|
最少： 1
倍數： 1
:
250
|
|
|
SMD/SMT
|
OM-780-4S4S-8
|
125 V
|
- 55 C
|
+ 150 C
|
|
臺灣