Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low RDS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

分離式半導體的類型
變更類別視圖
結果: 309
選擇 圖像 零件編號
 製造商
說明 規格書 供貨情況 定價 (TWD) 基於數量按單價篩選表中結果。
數量 RoHS 產品類型
技術
安裝風格
封裝/外殼

STMicroelectronics MOSFET N-channel 950 V, 0.110 Ohm typ., 38 A MDmesh K5 Power MOSFET in a TO-247 package
規格書
2庫存量
2,400在途量
最少： 1
倍數： 1

MOSFETs Si Through Hole TO-247-3

STMicroelectronics MOSFET N-Ch 650V 0.067 Ohm 35A MDmesh M5 MOS
規格書
61庫存量
1,200預期2027/1/29
最少： 1
倍數： 1

MOSFETs Si Through Hole TO-247-3

STMicroelectronics MOSFET N-channel 600 V, 60 mOhm typ., 42 A MDmesh M2 Power MOSFET in a TO-247 package
規格書
374庫存量
最少： 1
倍數： 1

MOSFETs Si Through Hole TO-247-3

STMicroelectronics MOSFET N-Ch 950V 1 Ohm 9A Zener MDmesh K5
規格書
1,193庫存量
最少： 1
倍數： 1

MOSFETs Si Through Hole TO-247-3

STMicroelectronics MOSFET N-channel 1050 V, 1.4 Ohm typ., 4 A MDmesh K5 Power MOSFET in a TO-247 package
規格書
208庫存量
最少： 1
倍數： 1

MOSFETs Si Through Hole TO-247-3

STMicroelectronics MOSFET N-Ch 650 V 0.024 Ohm 84 A MDmesh(TM)
規格書
48庫存量
最少： 1
倍數： 1

MOSFETs Si Through Hole TO-247-3
STMicroelectronics MOSFET N-channel 600 V, 0.078 Ohm typ., 34 A MDmesh M2 Power MOSFET in TO-3PF package
規格書
385庫存量
最少： 1
倍數： 1

MOSFETs Si Through Hole TO-3PF-3
STMicroelectronics MOSFET N-channel 500 V, 325 mOhm typ., 10 A MDmesh M2 Power MOSFET in TO-220 package
規格書
360庫存量
最少： 1
倍數： 1

MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFET N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh DM2 Power MOSFET in D2PAK package
規格書
158庫存量
1,000在途量
可選用MouseReel
最少： 1
倍數： 1
: 1,000

MOSFETs Si SMD/SMT D2PAK-3 (TO-263-3)
STMicroelectronics MOSFET N-channel 1200 V, 0.62 Ohm typ., 12 A MDmesh K5 Power MOSFET in TO-220 package
規格書
3,744在途量
最少： 1
倍數： 1

MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFET N-Ch 800V 0.3Ohm 14A pwr MOSFET
規格書
9,173在途量
最少： 1
倍數： 1

MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFET N-Ch 650 V 0.012 Ohm 138 A MDmesh M5
規格書
4,132在途量
最少： 1
倍數： 1

MOSFETs Si Through Hole Max247-3
STMicroelectronics MOSFET N-Ch 800V 0.3Ohm 14A pwr MOSFET
規格書
4庫存量
最少： 1
倍數： 1

MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFET N-channel 500 V, 0.24 Ohm typ., 13 A MDmesh M2 Power MOSFET in a TO-220FP packag
規格書
654庫存量
最少： 1
倍數： 1

MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFET N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220FP package
規格書
189庫存量
最少： 1
倍數： 1

MOSFETs Si Through Hole TO-220-3
STMicroelectronics MOSFET N-channel 650 V, 0.275 Ohm typ., 12 A MDmesh M2 Power MOSFET in a TO-220FP packa
規格書
479庫存量
最少： 1
倍數： 1

MOSFETs Si Through Hole TO-220-3
STMicroelectronics IGBT 600V 20A Hi Spd TrenchGate FieldStop
規格書
162庫存量
最少： 1
倍數： 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics MOSFET N-CH 600V 0.35Ohm 11A Mdmesh M2
規格書
1,842預期2027/2/12
可選用MouseReel
最少： 1
倍數： 1
: 1,000

MOSFETs Si SMD/SMT D2PAK-3 (TO-263-3)
STMicroelectronics MOSFET N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in DPAK package
規格書
2,500預期2027/2/5
可選用MouseReel
最少： 1
倍數： 1
: 2,500

MOSFETs Si SMD/SMT DPAK-3 (TO-252-3)
STMicroelectronics MOSFET N-channel 650 V, 0.024 Ohm typ., 88 A MDmesh M5 Power MOSFET in a ISOTOP package
規格書
288在途量
最少： 1
倍數： 1

MOSFETs Si SMD/SMT ISOTOP-4
STMicroelectronics MOSFET N-ch 650 V 0.168 Ohm 18 A MDmesh M5
規格書
4,000在途量
最少： 1
倍數： 1

MOSFETs Si Through Hole TO-220-3

STMicroelectronics IGBT Trench gate field-stop IGBT, V series 600 V, 30 A very high speed
規格書
3,817預期2026/10/30
可選用MouseReel
最少： 1
倍數： 1
: 1,000

IGBT Transistors Si SMD/SMT D2PAK-3
STMicroelectronics IGBT Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
規格書
3,115在途量
最少： 1
倍數： 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBT Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
規格書
1,200預期2026/10/16
最少： 1
倍數： 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics MOSFET N-channel 650 V, 0.475 Ohm typ., 8.5 A MDmesh M5 Power MOSFET in a PowerFLAT 5x5
規格書
3,000預期2027/5/7
可選用MouseReel
最少： 1
倍數： 1
: 3,000

MOSFETs Si SMD/SMT PowerFLAT-5x5-12