CoolSiC™ Automotive 1200V G1 SiC Trench MOSFETs

Infineon Technologies CoolSiC™ Automotive 1200V G1 SiC Trench MOSFETs offer increased power density, higher efficiency, and improved reliability. The granular portfolio features 1200V SiC MOSFETs in TO-247-3pin, TO-247-4pin, and D2PAK-7pin packages with an RDS(on) ranging from 8.7mΩ to 160mΩ, and ID at +25°C, maximum of 17A to 205A. High power density, superior efficiency, bi-directional charging capabilities, and significant reductions in system costs make the Infineon Technologies 1200V Automotive CoolSiC™ MOSFET Modules an ideal choice for onboard charger and DC-DC applications. The TO- and SMD components also come with Kelvin-source pins for optimized switching performance.

電晶體的類型

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選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (TWD) 基於數量按單價篩選表中結果。 數量 RoHS 產品類型 技術 安裝風格 封裝/外殼 晶體管極性
Infineon Technologies 碳化矽MOSFET SIC_DISCRETE 736庫存量
最少: 1
倍數: 1

SiC MOSFETS SiC Through Hole TO-247-3 N-Channel
Infineon Technologies 碳化矽MOSFET SIC_DISCRETE 2,336庫存量
最少: 1
倍數: 1
: 750

SiC MOSFETS SiC SMD/SMT PG-HDSOP-22-3 N-Channel
Infineon Technologies 碳化矽MOSFET SIC_DISCRETE 2,899庫存量
最少: 1
倍數: 1

SiC MOSFETS SiC Through Hole TO-247-4 N-Channel
Infineon Technologies MOSFET SIC_DISCRETE 441庫存量
最少: 1
倍數: 1
: 1,000

MOSFETs Si
Infineon Technologies 碳化矽MOSFET SIC_DISCRETE 307庫存量
2,000在途量
最少: 1
倍數: 1
: 1,000

SiC MOSFETS SiC SMD/SMT TO-263-7 N-Channel
Infineon Technologies MOSFET SIC_DISCRETE 899庫存量
最少: 1
倍數: 1
: 1,000

MOSFETs Si
Infineon Technologies 碳化矽MOSFET SIC_DISCRETE 898庫存量
最少: 1
倍數: 1
: 1,000

SiC MOSFETS SiC SMD/SMT TO-263-7 N-Channel
Infineon Technologies MOSFET SIC_DISCRETE 1,550庫存量
最少: 1
倍數: 1
: 1,000

MOSFETs Si SMD/SMT
Infineon Technologies 碳化矽MOSFET SIC_DISCRETE 782庫存量
3,000在途量
最少: 1
倍數: 1
: 750

SiC MOSFETS SiC SMD/SMT PG-HDSOP-22-3 N-Channel
Infineon Technologies 碳化矽MOSFET SIC_DISCRETE 458庫存量
750預期2027/1/28
最少: 1
倍數: 1
: 750

SiC MOSFETS SiC SMD/SMT PG-HDSOP-22-3 N-Channel
Infineon Technologies 碳化矽MOSFET SIC_DISCRETE 2,123庫存量
最少: 1
倍數: 1
: 750

SiC MOSFETS SiC SMD/SMT PG-HDSOP-22-3 N-Channel
Infineon Technologies 碳化矽MOSFET SIC_DISCRETE 23庫存量
240預期2027/4/15
最少: 1
倍數: 1

SiC MOSFETS SiC Through Hole TO-247-4 N-Channel
Infineon Technologies 碳化矽MOSFET CoolSiC Automotive MOSFET 1200 V 108庫存量
3,750在途量
最少: 1
倍數: 1
: 750

SiC MOSFETS SiC SMD/SMT PG-HDSOP-22-3 N-Channel
Infineon Technologies 碳化矽MOSFET Tailored to address OBC/DC-DC applications for 800V Automotive architecture 27庫存量
6,750在途量
最少: 1
倍數: 1
: 750

SiC MOSFETS SiC SMD/SMT PG-HDSOP-22-3 N-Channel
Infineon Technologies 碳化矽MOSFET Tailored to address OBC/DC-DC applications for 800V Automotive architecture 96庫存量
750在途量
最少: 1
倍數: 1
: 750

SiC MOSFETS SiC SMD/SMT PG-HDSOP-22-3 N-Channel
Infineon Technologies 碳化矽MOSFET SIC_DISCRETE 123庫存量
最少: 1
倍數: 1

SiC MOSFETS SiC Through Hole TO-247-4 N-Channel
Infineon Technologies 碳化矽MOSFET SIC_DISCRETE 121庫存量
240在途量
最少: 1
倍數: 1

SiC MOSFETS SiC Through Hole TO-247-4 N-Channel
Infineon Technologies 碳化矽MOSFET SIC_DISCRETE 138庫存量
720在途量
最少: 1
倍數: 1

SiC MOSFETS SiC Through Hole TO-247-4 N-Channel
Infineon Technologies 碳化矽MOSFET SIC_DISCRETE 205庫存量
480預期2026/12/10
最少: 1
倍數: 1

SiC MOSFETS SiC Through Hole TO-247-4 N-Channel
Infineon Technologies 碳化矽MOSFET SIC_DISCRETE 26庫存量
240預期2026/12/10
最少: 1
倍數: 1

SiC MOSFETS SiC Through Hole TO-247-4 N-Channel
Infineon Technologies MOSFET SIC_DISCRETE
3,500在途量
最少: 1
倍數: 1
: 1,000

MOSFETs Si
Infineon Technologies 碳化矽MOSFET SIC_DISCRETE
788預期2026/10/22
最少: 1
倍數: 1

SiC MOSFETS SiC Through Hole TO-247-3 N-Channel
Infineon Technologies 碳化矽MOSFET SIC_DISCRETE 無庫存前置作業時間 52 週
最少: 1
倍數: 1
: 1,000

SiC MOSFETS SiC SMD/SMT TO-263-7 N-Channel
Infineon Technologies MOSFET SIC_DISCRETE 無庫存前置作業時間 52 週
最少: 1,000
倍數: 1,000
: 1,000

MOSFETs Si
Infineon Technologies 碳化矽MOSFET SIC_DISCRETE 無庫存前置作業時間 52 週
最少: 1
倍數: 1

SiC MOSFETS SiC Through Hole TO-247-4 N-Channel