Results: 47
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Qty. RoHS ECAD Model Technology
Mounting Style
Package / Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Packaging

Infineon Technologies MOSFETs HIGH POWER_NEW
Datasheet
343In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 77 A 24 mOhms - 20 V, 20 V 4 V 183 nC - 55 C + 150 C 320 W Enhancement Tube

Infineon Technologies MOSFETs HIGH POWER_NEW
Datasheet
625In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 63 A 26 mOhms - 20 V, 20 V 3.5 V 141 nC - 55 C + 150 C 278 W Enhancement CoolMOS Tube

Infineon Technologies MOSFETs HIGH POWER_NEW
Datasheet
717In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 50 A 40 mOhms - 20 V, 20 V 3.5 V 109 nC - 55 C + 150 C 227 W Enhancement Tube

Infineon Technologies MOSFETs HIGH POWER_NEW
Datasheet
1,939In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 31 A 57 mOhms - 20 V, 20 V 3.5 V 67 nC - 55 C + 150 C 156 W Enhancement CoolMOS Tube

Infineon Technologies MOSFETs HIGH POWER_NEW
Datasheet
400In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 700 V 68.5 A 41 mOhms - 20 V, 20 V 4 V 102 nC - 55 C + 150 C 500 W Enhancement Tube
Infineon Technologies MOSFETs LOW POWER_NEW
Datasheet
348In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 6 A 237 mOhms - 20 V, 20 V 3.5 V 18 nC - 55 C + 150 C 24 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs HIGH POWER_NEW
Datasheet
500In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 18 A 125 mOhms - 20 V, 20 V 3.5 V 36 nC - 55 C + 150 C 92 W Enhancement Tube
Infineon Technologies MOSFETs HIGH POWER_NEW
Datasheet
517In Stock
MouseReel Available
Min.: 1
Mult.: 1
: 2,000

Si SMD/SMT HSOF-8 N-Channel 1 Channel 650 V 28 A 90 mOhms - 20 V, 20 V 4 V 42 nC - 55 C + 150 C 160 W Enhancement Reel, Cut Tape, MouseReel

Infineon Technologies MOSFETs HIGH POWER_NEW
Datasheet
254In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 18 A 125 mOhms - 20 V, 20 V 3.5 V 36 nC - 55 C + 150 C 92 W Enhancement Tube
Infineon Technologies MOSFETs HIGH POWER_NEW
Datasheet
425In Stock
1,000Expected 8/27/2026
Min.: 1
Mult.: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 21 A 105 mOhms - 20 V, 20 V 4.5 V 42 nC - 55 C + 150 C 106 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFETs HIGH POWER_NEW
Datasheet
420In Stock
Min.: 1
Mult.: 1
: 3,000

Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 22 A 115 mOhms - 20 V, 20 V 3.5 V 42 nC - 40 C + 150 C 124 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFETs LOW POWER_NEW
Datasheet
712In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 9 A 237 mOhms - 20 V, 20 V 3.5 V 18 nC - 55 C + 150 C 52 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs HIGH POWER_NEW
Datasheet
88In Stock
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 36 A 60 mOhms - 10 V, 10 V 4.5 V 68 nC - 55 C + 150 C 171 W Enhancement Tube
Infineon Technologies MOSFETs HIGH POWER_NEW
Datasheet
73In Stock
Min.: 1
Mult.: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 16 A 145 mOhms - 20 V, 20 V 4.5 V 31 nC - 55 C + 150 C 83 W Enhancement Reel, Cut Tape

Infineon Technologies MOSFETs HIGH POWER_NEW
Datasheet
15In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 16 A 145 mOhms - 20 V, 20 V 3.5 V 31 nC - 55 C + 150 C 83 W Enhancement Tube
Infineon Technologies MOSFETs HIGH POWER_NEW
Datasheet
4,000Expected 2/4/2027
MouseReel Available
Min.: 1
Mult.: 1
: 2,000

Si SMD/SMT HSOF-8 N-Channel 1 Channel 650 V 67 A 35 mOhms - 20 V, 20 V 4 V 109 nC - 55 C + 150 C 351 W Enhancement Reel, Cut Tape, MouseReel

Infineon Technologies MOSFETs HIGH POWER_NEW
Datasheet
1,680On Order
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 25 A 90 mOhms - 20 V, 20 V 3.5 V 51 nC - 55 C + 150 C 125 W Enhancement Tube
Infineon Technologies MOSFETs HIGH POWER_NEW
Datasheet
495Expected 1/28/2027
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 16 A 145 mOhms - 20 V, 20 V 3.5 V 31 nC - 55 C + 150 C 83 W Enhancement Tube
Infineon Technologies MOSFETs HIGH POWER_NEW
Datasheet
Non-Stocked Lead-Time 8 Weeks
Min.: 500
Mult.: 500

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 21 A 105 mOhms - 20 V, 20 V 3.5 V 42 nC - 55 C + 150 C 106 W Enhancement Tube

Infineon Technologies MOSFETs HIGH POWER_NEW
Datasheet
Lead-Time 8 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 14 A 144 mOhms - 20 V, 20 V 3.5 V 28 nC - 55 C + 150 C 75 W Enhancement CoolMOS Tube
Infineon Technologies MOSFETs HIGH POWER_NEW
Datasheet
Lead-Time 19 Weeks
MouseReel Available
Min.: 1
Mult.: 1
: 2,000

Si SMD/SMT HSOF-8 N-Channel 1 Channel 650 V 21 A 125 mOhms - 20 V, 20 V 4 V 8 nC - 55 C + 150 C 127 W Enhancement Reel, Cut Tape, MouseReel

Infineon Technologies MOSFETs HIGH POWER_NEW
Datasheet
Non-Stocked Lead-Time 8 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 21 A 105 mOhms - 20 V, 20 V 3.5 V 42 nC - 55 C + 150 C 106 W Enhancement Tube