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Results: 6

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Vds - Drain-Source Breakdown Voltage

Id - Continuous Drain Current

Rds On - Drain-Source Resistance

Vgs - Gate-Source Voltage

Vgs th - Gate-Source Threshold Voltage

Qg - Gate Charge

Pd - Power Dissipation

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Select	Image	Part #	Mfr.	Description	Datasheet	Availability	Pricing (TWD) Filter the results in the table by unit price based on your quantity.	Qty.	RoHS	ECAD Model	Technology	Mounting Style	Package / Case	Transistor Polarity	Number of Channels	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs - Gate-Source Voltage	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Minimum Operating Temperature	Maximum Operating Temperature	Pd - Power Dissipation	Channel Mode	Packaging
	MOSFETs HIGH POWER_NEW IPW65R060CFD7XKSA1 Infineon Technologies 1: NT$329.10 268In Stock NRND	Mfr. Part # IPW65R060CFD7XKSA1 Mouser Part # 726-IPW65R060CFD7SA1 NRND	Infineon Technologies	MOSFETs HIGH POWER_NEW Learn More about Infineon Technologies infineon 650v cfd7 sj power mosfets	Datasheet	268In Stock	NT$329.10 NT$193.95 NT$163.48 NT$158.46 NT$149.14	Min.: 1 Mult.: 1			Si	Through Hole	TO-247-3	N-Channel	1 Channel	650 V	36 A	60 mOhms	10 V	3.5 V	68 nC	- 55 C	+ 150 C	171 W	Enhancement	Tube
	MOSFETs HIGH POWER_NEW IPW65R029CFD7XKSA1 Infineon Technologies 1: NT$426.97 95In Stock	Mfr. Part # IPW65R029CFD7XKSA1 Mouser Part # 726-IPW65R029CFD7XKS	Infineon Technologies	MOSFETs HIGH POWER_NEW Learn More about Infineon Technologies infineon 650v cfd7 sj power mosfets	Datasheet	95In Stock	NT$426.97 NT$291.10 NT$283.57	Min.: 1 Mult.: 1			Si	Through Hole	TO-247-3	N-Channel	1 Channel	700 V	69 A	29 mOhms	20 V	4.5 V	145 nC	- 55 C	+ 150 C	305 W	Enhancement	Tube
	MOSFETs HIGH POWER_NEW IPP65R041CFD7XKSA1 Infineon Technologies 1: NT$357.78 290In Stock	Mfr. Part # IPP65R041CFD7XKSA1 Mouser Part # 726-IPP65R041CFD7XKS	Infineon Technologies	MOSFETs HIGH POWER_NEW Learn More about Infineon Technologies infineon 650v cfd7 sj power mosfets	Datasheet	290In Stock	NT$357.78 NT$244.50 NT$201.84 NT$180.68 NT$169.93	Min.: 1 Mult.: 1			Si	Through Hole		N-Channel	1 Channel	650 V	50 A	41 mOhms	20 V	4.5 V	102 nC	- 55 C	+ 150 C	227 W	Enhancement	Tube
	MOSFETs HIGH POWER_NEW IPW65R041CFD7XKSA1 Infineon Technologies 1: NT$391.84 284In Stock 720On Order	Mfr. Part # IPW65R041CFD7XKSA1 Mouser Part # 726-IPW65R041CFD7XKS	Infineon Technologies	MOSFETs HIGH POWER_NEW Learn More about Infineon Technologies infineon 650v cfd7 sj power mosfets	Datasheet	284In Stock 720On Order	NT$391.84 NT$213.31 NT$197.53 NT$196.46	Min.: 1 Mult.: 1			Si	Through Hole	TO-247-3	N-Channel	1 Channel	700 V	68.5 A	41 mOhms	20 V	4 V	102 nC	- 55 C	+ 150 C	500 W	Enhancement	Tube
	MOSFETs HIGH POWER_NEW IPP65R060CFD7XKSA1 Infineon Technologies 1: NT$290.74 41In Stock 500Expected 12/10/2026	Mfr. Part # IPP65R060CFD7XKSA1 Mouser Part # 726-IPP65R060CFD7SA1	Infineon Technologies	MOSFETs HIGH POWER_NEW Learn More about Infineon Technologies infineon 650v cfd7 sj power mosfets	Datasheet	41In Stock 500Expected 12/10/2026	NT$290.74 NT$157.02 NT$144.12 NT$132.29	Min.: 1 Mult.: 1			Si	Through Hole	TO-220-3	N-Channel	1 Channel	650 V	36 A	60 mOhms	10 V	4.5 V	68 nC	- 55 C	+ 150 C	171 W	Enhancement	Tube
	MOSFETs HIGH POWER_NEW IPZA65R029CFD7XKSA1 Infineon Technologies 1: NT$539.90 151In Stock	Mfr. Part # IPZA65R029CFD7XKSA1 Mouser Part # 726-IPZA65R029CFD7XK	Infineon Technologies	MOSFETs HIGH POWER_NEW Learn More about Infineon Technologies infineon 650v cfd7 sj power mosfets	Datasheet	151In Stock	NT$539.90 NT$304.01 NT$298.63	Min.: 1 Mult.: 1			Si	Through Hole	TO-247-4	N-Channel	1 Channel	650 V	69 A	29 mOhms	20 V	4.5 V	145 nC	- 55 C	+ 150 C	305 W	Enhancement	Tube