Results: 36
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Description Datasheet Availability Pricing (TWD) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package / Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Packaging
STMicroelectronics MOSFETs N-ch 650 V 0.168 Ohm 18 A MDmesh M5
Datasheet
4,000On Order
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 18 A 190 mOhms - 25 V, 25 V 4 V 36 nC - 55 C + 150 C 130 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-Ch 650V 0.198 Ohm 15 A MDmesh V
Datasheet
2,000Expected 2/12/2027
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 9.4 A 220 mOhms - 25 V, 25 V 3 V 31 nC - 55 C + 150 C 110 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-Ch 650V 0.067 Ohm 35A MDmesh M5 MOS
Datasheet
1,678Expected 1/29/2027
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 35 A 78 mOhms - 25 V, 25 V 5 V 82 nC - 55 C + 150 C 208 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-Ch 650V 0.056 Ohm 42 A MDmesh M5
Datasheet
1,999Expected 3/26/2027
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 42 A 63 mOhms - 25 V, 25 V 3 V 98 nC - 55 C + 150 C 250 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-Ch 650V 0.014 Ohm Mdmesh M5 130A
Datasheet
Lead-Time 26 Weeks
Min.: 1
Mult.: 1

Si Through Hole Max247-3 N-Channel 1 Channel 650 V 130 A 17 mOhms - 25 V, 25 V 3 V 363 nC - 55 C + 150 C 625 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-CH 65V 33A MDMESH
Datasheet
31In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 33 A 79 mOhms - 25 V, 25 V 3 V 98 nC - 55 C + 150 C 40 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-Ch 650V 0.098 Ohm 29A MDMesh M5 MOS
Datasheet
Non-Stocked Lead-Time 24 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 28 A 110 mOhms - 25 V, 25 V 3 V 62.5 nC - 55 C + 150 C 30 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-Ch 650V 0.43 Ohm 9A MDmeshV 710V
Datasheet
Non-Stocked Lead-Time 24 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 9 A 480 mOhms - 25 V, 25 V 5 V 17 nC - 55 C + 150 C 85 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-Ch 650V .0308 Ohm 11A MDmesh V MOS
Datasheet
Non-Stocked Lead-Time 24 Weeks
Min.: 1,000
Mult.: 1,000

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 11 A 340 mOhms 85 W MDmesh Tube
STMicroelectronics MOSFETs N-Ch 650 Volt 12 Amp
Datasheet
Non-Stocked Lead-Time 24 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 12 A 299 mOhms - 25 V, 25 V 3 V 31 nC - 55 C + 150 C 90 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-Channel 650V 93A 0.019 Ohm Mdmesh M5
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 600
Mult.: 600

Si Through Hole Max247-3 N-Channel 1 Channel 650 V 96 A 19 mOhms - 25 V, 25 V 4 V 350 nC - 55 C + 150 C 625 W Enhancement MDmesh Tube