HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

結果: 719
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (TWD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 技術 安裝風格 封裝/外殼 晶體管極性 通道數 Vds - 漏-源擊穿電壓 Id - C連續漏極電流 Rds On - 漏-源電阻 Vgs - 閘極-源極電壓 Vgs th - 門源門限電壓 Qg - 閘極充電 最低工作溫度 最高工作溫度 Pd - 功率消耗 通道模式 資格 公司名稱 封裝
IXYS MOSFET 250V/170A Ultra Junc tion X3-Class MOSFE 1,693庫存量
最少: 1
倍數: 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 250 V 170 A 6.1 mOhms - 20 V, 20 V 2.5 V 190 nC - 55 C + 150 C 960 W Enhancement HiPerFET Tube
IXYS MOSFET 10 Amps 800V 1.1 Rds 8,813庫存量
最少: 1
倍數: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 800 V 10 A 1.1 Ohms - 30 V, 30 V 3 V 40 nC - 55 C + 150 C 300 W Enhancement HiPerFET Tube

IXYS MOSFET MOSFET 1,138庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 64 A 96 mOhms - 30 V, 30 V 5 V 200 nC - 55 C + 150 C 1.04 mW Enhancement HiPerFET Tube
IXYS MOSFET N-Channel: Power MOSFET w/Fast Diode 1,488庫存量
最少: 1
倍數: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 300 V 150 A 19 mOhms - 20 V, 20 V 3 V 197 nC - 55 C + 150 C 1.3 kW Enhancement HiPerFET Tube
IXYS MOSFET 600V 64A 0.095Ohm PolarP3 Power MOSFET 1,634庫存量
最少: 1
倍數: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 600 V 64 A 95 mOhms - 30 V, 30 V 5 V 145 nC - 55 C + 150 C 1.13 kW Enhancement HiPerFET Tube
IXYS MOSFET TO220 200V 72A N-CH X3CLASS 3,503庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 72 A 20 mOhms - 20 V, 20 V 2.5 V 55 nC - 55 C + 150 C 320 W Enhancement HiPerFET Tube
IXYS MOSFET 1000V 52A PLUS247 Power MOSFET 94庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-PLUS-3 N-Channel 1 Channel 1 kV 52 A 125 mOhms - 30 V, 30 V 3.5 V 245 nC - 55 C + 150 C 1.25 mW Enhancement HiPerFET Tube
IXYS MOSFET Trench HiperFET Power MOSFET 97庫存量
300預期2026/12/29
最少: 1
倍數: 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 300 V 94 A 36 mOhms HiPerFET Tube
IXYS MOSFET 1000V 32A TO-264 Power MOSFET 131庫存量
最少: 1
倍數: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 1 kV 32 A 220 mOhms - 30 V, 30 V 3.5 V 130 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube

IXYS MOSFET TRENCHT2 HIPERFET PWR MOSFET 75V 340A 1,303庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 75 V 340 A 3.2 mOhms - 20 V, 20 V 4 V 300 nC - 55 C + 175 C 935 W Enhancement HiPerFET Tube

IXYS MOSFET Trench HiperFET Power MOSFET 293庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 300 V 86 A 43 mOhms - 20 V, 20 V 5 V 180 nC - 55 C + 150 C 830 W Enhancement HiPerFET Tube
IXYS MOSFET 600V 22A 0.36Ohm PolarP3 Power MOSFET 480庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 22 A 360 mOhms - 30 V, 30 V 5 V 38 nC 500 W HiPerFET Tube
IXYS MOSFET TO268 250V 150A N-CH X3CLASS 238庫存量
最少: 1
倍數: 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 250 V 150 A 9 mOhms - 10 V, 10 V 2.5 V 154 nC - 55 C + 150 C 735 W Enhancement HiPerFET Tube
IXYS MOSFET TO252 250V 30A N-CH X3CLASS 660庫存量
最少: 1
倍數: 1

Si SMD/SMT TO-252-3 N-Channel 1 Channel 250 V 30 A 60 mOhms - 20 V, 20 V 2.5 V 21 nC - 55 C + 150 C 170 W Enhancement HiPerFET Tube
IXYS MOSFET TO247 650V 80A N-CH X2CLASS 239庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 80 A 38 mOhms - 30 V, 30 V 2.7 V 137 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube

IXYS MOSFET 850V Ultra Junction X-Class Pwr MOSFET 287庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 850 V 20 A 330 mOhms - 30 V, 30 V 3.5 V 63 nC - 55 C + 150 C 540 W Enhancement HiPerFET Tube

IXYS MOSFET POLAR HIPERFET WITH REDUCED RDS 1200V 6A 187庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 6 A 2.75 Ohms - 30 V, 30 V 5 V 92 nC - 55 C + 150 C 250 W Enhancement HiPerFET Tube

IXYS MOSFET 74 Amps 200V 0.034 Rds 540庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 74 A 34 mOhms - 20 V, 20 V 5 V 107 nC - 55 C + 175 C 480 W Enhancement HiPerFET Tube

IXYS MOSFET N-Channel: Power MOSFET w/Fast Diode 276庫存量
最少: 1
倍數: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 300 V 94 A 36 mOhms - 20 V, 20 V 3 V 102 nC - 55 C + 150 C 1.04 kW Enhancement HiPerFET Tube
IXYS MOSFET 26 Amps 1200V 246庫存量
最少: 1
倍數: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 1.2 kV 26 A 500 mOhms - 30 V, 30 V 6.5 V 255 nC - 55 C + 150 C 960 W Enhancement HiPerFET Tube
IXYS MOSFET 32 Amps 1000V 0.32 Rds 295庫存量
最少: 1
倍數: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 1 kV 32 A 320 mOhms - 30 V, 30 V 6.5 V 225 nC - 55 C + 150 C 960 W Enhancement HiPerFET Tube
IXYS MOSFET 850V Ultra Junction X-Class Pwr MOSFET 314庫存量
最少: 1
倍數: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 850 V 50 A 105 mOhms - 30 V, 30 V 3.5 V 152 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube
IXYS MOSFET 500V 64A 367庫存量
最少: 1
倍數: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 500 V 64 A 85 mOhms - 30 V, 30 V 3 V 150 nC - 55 C + 150 C 830 W Enhancement HiPerFET Tube
IXYS MOSFET 88 Amps 300V 0.04 Rds 162庫存量
最少: 1
倍數: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 300 V 88 A 40 mOhms - 20 V, 20 V 5 V 180 nC - 55 C + 150 C 600 W Enhancement HiPerFET Tube
IXYS MOSFET MOSFET 650V/22A Ultra Junction X2 729庫存量
最少: 1
倍數: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 22 A 160 mOhms - 30 V, 30 V 2.7 V 38 nC - 55 C + 150 C 390 W Enhancement HiPerFET Tube