|
|
碳化矽MOSFET CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
- IMYH200R024M1HXKSA1
- Infineon Technologies
-
1:
NT$1,628.67
-
1,431庫存量
|
Mouser 元件編號
726-IMYH200R024M1HXK
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
|
|
1,431庫存量
|
|
|
NT$1,628.67
|
|
|
NT$1,194.16
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
2 kV
|
89 A
|
33 mOhms
|
- 10 V, + 23 V
|
3.5 V
|
137 nC
|
- 55 C
|
+ 150 C
|
576 W
|
Enhancement
|
CoolSIC
|
|
|
|
碳化矽MOSFET CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
- IMYH200R100M1HXKSA1
- Infineon Technologies
-
1:
NT$651.75
-
6,930庫存量
-
10,320預期2026/11/19
|
Mouser 元件編號
726-IMYH200R100M1HXK
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
|
|
6,930庫存量
10,320預期2026/11/19
|
|
|
NT$651.75
|
|
|
NT$403.67
|
|
|
NT$375.71
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
2 kV
|
26 A
|
131 mOhms
|
- 10 V, + 23 V
|
3.5 V
|
55 nC
|
- 55 C
|
+ 150 C
|
217 W
|
Enhancement
|
CoolSIC
|
|
|
|
碳化矽MOSFET CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
- IMYH200R050M1HXKSA1
- Infineon Technologies
-
1:
NT$898.04
-
828庫存量
-
1,920在途量
|
Mouser 元件編號
726-IMYH200R050M1HXK
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
|
|
828庫存量
1,920在途量
在途量:
480 預期2026/9/24
1,440 預期2026/10/15
|
|
|
NT$898.04
|
|
|
NT$572.17
|
|
|
報價
|
|
|
報價
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
2 kV
|
48 A
|
64 mOhms
|
- 10 V, + 23 V
|
3.5 V
|
82 nC
|
- 55 C
|
+ 150 C
|
348 W
|
Enhancement
|
CoolSIC
|
|
|
|
碳化矽MOSFET CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
- IMYH200R075M1HXKSA1
- Infineon Technologies
-
1:
NT$746.40
-
797庫存量
|
Mouser 元件編號
726-IMYH200R075M1HXK
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
|
|
797庫存量
|
|
|
NT$746.40
|
|
|
NT$468.20
|
|
|
NT$453.14
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
2 kV
|
34 A
|
98 mOhms
|
- 10 V, + 23 V
|
3.5 V
|
64 nC
|
- 55 C
|
+ 150 C
|
267 W
|
Enhancement
|
CoolSIC
|
|
|
|
碳化矽MOSFET CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
- IMYH200R012M1HXKSA1
- Infineon Technologies
-
1:
NT$2,854.74
-
1,930在途量
|
Mouser 元件編號
726-IMYH200R012M1HXK
|
Infineon Technologies
|
碳化矽MOSFET CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
|
|
1,930在途量
在途量:
10 預期2026/11/26
1,920 預期2027/1/28
|
|
|
NT$2,854.74
|
|
|
NT$2,373.99
|
|
最少： 1
倍數： 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
2 kV
|
123 A
|
16.5 mOhms
|
- 10 V, + 23 V
|
3.5 V
|
246 nC
|
- 55 C
|
+ 150 C
|
552 W
|
Enhancement
|
CoolSIC
|
|
臺灣