ISSI 記憶體 IC

結果: 2,944
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (TWD) 基於數量按單價篩選表中結果。 數量 RoHS 產品 產品類型 安裝風格 封裝/外殼 存儲容量 接口類型

ISSI SRAM 1Mb,High-Speed/Low Power,Async,128K x 8,12ns/3.3v or 15ns/2.5v-3.6v, 32 Pin TSOP II, RoHS 無庫存前置作業時間 12 週
最少: 1,000
倍數: 1,000
: 1,000

SRAM SMD/SMT TSOP-32 1 Mbit Parallel

ISSI SRAM 1Mb,High-Speed,Async,128K x 8,12ns,5v,32 Pin TSOP I (8x20mm), RoHS 無庫存前置作業時間 12 週
最少: 1,500
倍數: 1,500
: 1,500

SRAM SMD/SMT TSOP-32 1 Mbit Parallel
ISSI SRAM 256K,Low Power/Power Saver,Async,32K x 8,45ns,3.3v,28 Pin TSOP I, RoHS 無庫存前置作業時間 12 週
最少: 2,000
倍數: 2,000
: 2,000

SRAM SMD/SMT TSOP-28 256 kbit Parallel

ISSI SRAM 2Mb,High-Speed,Async,128K x 16,12ns/3.3v, or 15ns/2.5V-3.6V, 44 Pin TSOP II, RoHS 無庫存前置作業時間 12 週
最少: 1,000
倍數: 1,000
: 1,000

SRAM SMD/SMT TSOP-44 2 Mbit Parallel

ISSI SRAM 2Mb, Low Power/Power Saver,Async,128K x 16,55ns,2.5v-3.6v,48 Ball mBGA (6x8 mm), RoHS 無庫存前置作業時間 12 週
最少: 2,500
倍數: 2,500
: 2,500

SRAM SMD/SMT TSOP-44 2 Mbit Parallel
ISSI SRAM 4Mb, Low Power/Power Saver,Async,256K x 16,55ns,2.5v-3.6v,48 Ball mBGA (6x8 mm), RoHS 無庫存前置作業時間 12 週
最少: 2,500
倍數: 2,500
: 2,500

SRAM SMD/SMT TFBGA-48 4 Mbit Parallel

ISSI SRAM 4Mb 256Kx16 55ns Async SRAM 無庫存前置作業時間 12 週
最少: 1
倍數: 1
: 1,000

SRAM SMD/SMT TSOP-44 4 Mbit Parallel
ISSI SRAM 16Mb,High-Speed,Async,1Mbx16, 20ns, 1.65v-2.2v, 48 Ball mBGA (6x8 mm), RoHS 無庫存前置作業時間 12 週
最少: 480
倍數: 480

SRAM SMD/SMT BGA-48 16 Mbit Parallel
ISSI SRAM 16Mb,High-Speed,Async,1Mbx16, 20ns, 1.65v-2.2v, 48 Ball mBGA (6x8 mm), RoHS 無庫存前置作業時間 12 週
最少: 2,500
倍數: 2,500
: 2,500

SRAM SMD/SMT BGA-48 16 Mbit Parallel

ISSI SRAM 1M, 2.4V-3.6V, 10ns LP Async SRAM 無庫存前置作業時間 12 週
最少: 1,000
倍數: 1,000
: 1,000

SRAM SMD/SMT TSOP-44 1 Mbit Parallel

ISSI SRAM 1M, 2.4V-3.6V, 10ns LP Async SRAM 無庫存前置作業時間 12 週
最少: 135
倍數: 135

SRAM SMD/SMT TSOP-44 1 Mbit Parallel
ISSI DRAM 256M 16Mx16 143MHz SDRAM, 3.3v 無庫存前置作業時間 6 週
最少: 1,500
倍數: 1,500
: 1,500

DRAM SMD/SMT TSOP-II-54 256 Mbit
ISSI DRAM 64M, 3.3V, 143Mhz 2Mx32 SDR SDRAM 無庫存前置作業時間 10 週
最少: 240
倍數: 240

DRAM SMD/SMT BGA-90 64 Mbit
ISSI DRAM 16G, 1.35V, DDR3L, 1Gx16,1600MT/s at 11-11-11, 96 ball BGA (10mm x 14mm) RoHS, IT, T&R 無庫存前置作業時間 52 週
最少: 2,000
倍數: 2,000
: 2,000
DRAM SMD/SMT BGA-96 16 Gbit
ISSI NOR快閃記憶體 64Mb, 48pin TSOP,3V, RoHS, T&R, Lowest Sector Protected, Uniform Sector 無庫存前置作業時間 24 週
最少: 1,500
倍數: 1,500
: 1,500
NOR Flash SMD/SMT TSOP-48 64 Mbit Parallel
ISSI NOR快閃記憶體 64Mb, 48pin TSOP,3V, RoHS, T&R, Highest Sector Protected, Uniform Sector 無庫存前置作業時間 24 週
最少: 1,500
倍數: 1,500
: 1,500
NOR Flash SMD/SMT TSOP-48 64 Mbit Parallel

ISSI SRAM 8Mb,High-Speed-Automotive,Async with ECC,1M x 8,10ns,2.4v-3.6v,44 Pin TSOP II, RoHS, Automotive temp 無庫存前置作業時間 14 週
最少: 1,000
倍數: 1,000
: 1,000

SRAM SMD/SMT TSSOP-44 8 Mbit Serial

ISSI SRAM 8Mb,High-Speed-Automotive,Async with ECC,1M x 8,10ns,2.4v-3.6v,44 Pin TSOP II, RoHS, Automotive temp 無庫存前置作業時間 14 週
最少: 135
倍數: 135

SRAM SMD/SMT TSSOP-44 8 Mbit Serial
ISSI NOR快閃記憶體 128Mb QPI/QSPI, 16-pin SOP 300Mil, RoHS, dedicated reset pin, T&R, Auto Grade 無庫存前置作業時間 30 週
最少: 1
倍數: 1
: 1,000

NOR Flash SMD/SMT SOIC-16 128 Mbit SPI
ISSI DRAM Automotive (Tc: -40 to +95C), 2G, 1.06-1.17/1.70-1.95V, LPDDR4, 128Mx16, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS, T&R 無庫存前置作業時間 52 週
最少: 2,500
倍數: 2,500
: 2,500

DRAM SMD/SMT BGA-200 2 Gbit
ISSI DRAM Automotive (Tc: -40 to +105C), 2G, 1.06-1.17/1.70-1.95V, LPDDR4, 128Mx16, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS, T&R 無庫存前置作業時間 52 週
最少: 2,500
倍數: 2,500
: 2,500

DRAM SMD/SMT BGA-200 2 Gbit
ISSI DRAM Automotive (Tc: -40 to +95C), 2G, 0.57-0.65V/1.06-1.17/1.70-1.95V, LPDDR4X, 128Mx16, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS 無庫存前置作業時間 52 週
最少: 136
倍數: 136

DRAM SMD/SMT BGA-200 2 Gbit
ISSI DRAM Automotive (Tc: -40 to +95C), 2G, 0.57-0.65V/1.06-1.17/1.70-1.95V, LPDDR4X, 128Mx16, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS, T&R 無庫存前置作業時間 52 週
最少: 2,500
倍數: 2,500
: 2,500

DRAM SMD/SMT BGA-200 2 Gbit
ISSI DRAM Automotive (Tc: -40 to +105C), 2G, 0.57-0.65V/1.06-1.17/1.70-1.95V, LPDDR4X, 128Mx16, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS 無庫存前置作業時間 52 週
最少: 136
倍數: 136

DRAM SMD/SMT BGA-200 2 Gbit
ISSI DRAM Automotive (Tc: -40 to +105C), 2G, 0.57-0.65V/1.06-1.17/1.70-1.95V, LPDDR4X, 128Mx16, 1600MHz, 200 ball BGA (10mmx14.5mm, 1.1mm max thickness) RoHS, T&R 無庫存前置作業時間 52 週
最少: 2,500
倍數: 2,500
: 2,500

DRAM SMD/SMT BGA-200 2 Gbit