DRAM

結果: 2,712
選擇 圖像 零件編號 製造商 說明 規格書 供貨情況 定價 (TWD) 基於數量按單價篩選表中結果。 數量 RoHS ECAD模型 類型 存儲容量 數據匯流排寬度 最高時鐘頻率 封裝/外殼 組織 存取時間 電源電壓 - 最小值 電源電壓 - 最大值 最低工作溫度 最高工作溫度 系列 封裝
ISSI DRAM 256M, 3.3V, SDRAM, 8Mx32, 143Mhz, 90 ball BGA (8mmx13mm) RoHS, IT
2,634在途量
最少: 1
倍數: 1

SDRAM 256 Mbit 32 bit 143 MHz BGA-90 8 M x 32 6.5 ns 3 V 3.6 V - 40 C + 85 C IS42S32800J
ISSI DRAM 256M, 3.3V, SDRAM, 8Mx32, 143Mhz, 86 pin TSOP II RoHS, IT
5,146在途量
最少: 1
倍數: 1

SDRAM 256 Mbit 32 bit 143 MHz TSOP-II-86 8 M x 32 6.5 ns 3 V 3.6 V - 40 C + 85 C IS42S32800J
ISSI DRAM DDR2,2G,1.8V, RoHs 400MHz,128Mx16
2,726在途量
最少: 1
倍數: 1

SDRAM - DDR2 2 Gbit 16 bit 400 MHz BGA-84 128 M x 16 400 ps 1.7 V 1.9 V 0 C + 85 C IS43DR16128C
ISSI DRAM 1G (64Mx16) 400MHz 1.8v DDR2 SDRAM
2,258在途量
最少: 1
倍數: 1

SDRAM - DDR2 1 Gbit 16 bit 400 MHz BGA-84 64 M x 16 400 ps 1.7 V 1.9 V - 40 C + 85 C IS43DR16640B Tray
ISSI DRAM DDR2,1G,1.8V, RoHs 400MHz, 64Mx16
23,327在途量
最少: 1
倍數: 1

SDRAM - DDR2 1 Gbit 16 bit 400 MHz BGA-84 64 M x 16 400 ps 1.7 V 1.9 V 0 C + 85 C IS43DR16640C Tray
ISSI DRAM 4G, 1.2V, DDR4, 256Mx16, 2400MT/s at 16-16-16, 96 ball BGA (7.5mm x13.5mm) RoHS, IT
6,732在途量
最少: 1
倍數: 1

SDRAM - DDR4 4 Gbit 16 bit 1.2 GHz BGA-96 256 M x 16 1.14 V 1.26 V - 40 C + 95 C IS43QR16256B Tray
ISSI DRAM 8G, 1.2V, DDR4, 512Mx16, 2666MT/s at 19-19-19, 96 ball BGA (10mm x14mm) RoHS
544在途量
最少: 1
倍數: 1

SDRAM - DDR4 8 Gbit 16 bit BGA-96 512 M x 16 18 ns 1.14 V 1.26 V 0 C + 95 C
ISSI DRAM 4G, 1.5V, DDR3, 256Mx16, 1600MT/s at 11-11-11, 96 ball BGA (9mm x13mm) RoHS
2,660在途量
最少: 1
倍數: 1

SDRAM - DDR3 4 Gbit 16 bit 800 MHz BGA-96 256 M x 16 20 ns 1.425 V 1.575 V 0 C + 95 C IS43TR16256B
ISSI DRAM 4G, 1.5V, DDR3, 256Mx16, 1600MT/s at 11-11-11, 96 ball BGA (9mm x13mm) RoHS, IT
25,741在途量
最少: 1
倍數: 1

SDRAM - DDR3 4 Gbit 16 bit 800 MHz BGA-96 256 M x 16 20 ns 1.425 V 1.575 V - 40 C + 95 C IS43TR16256B Tray
ISSI DRAM 4G, 1.5V, DDR3, 256Mx16, 1600MT/s at 11-11-11, 96 ball BGA (9mm x13mm) RoHS, T&R
4,500在途量
最少: 1
倍數: 1
: 1,500

SDRAM - DDR3 4 Gbit 16 bit 800 MHz BGA-96 256 M x 16 1.425 V 1.575 V 0 C + 95 C IS43TR16256B Reel, Cut Tape, MouseReel
ISSI DRAM 4G, 1.35V, DDR3L, 256Mx16, 1600MT/s at 11-11-11, 96 ball BGA (9mm x13mm) RoHS
11,480在途量
最少: 1
倍數: 1

SDRAM - DDR3L 4 Gbit 16 bit 800 MHz BGA-96 256 M x 16 20 ns 1.425 V 1.575 V 0 C + 95 C IS43TR16256BL Tray
ISSI DRAM 2G 128Mx16 1866MT/s 1.35V DDR3L I-Temp
2,089在途量
最少: 1
倍數: 1

SDRAM - DDR3L 2 Gbit 16 bit 933 MHz BGA-96 128 M x 16 20 ns 1.283 V 1.45 V - 40 C + 95 C IS43TR16128DL Tray
ISSI DRAM 2G 128Mx16 1866MT/s 1.35V DDR3L I-Temp
1,500預期2026/12/28
最少: 1
倍數: 1
: 1,500

SDRAM - DDR3L 2 Gbit 16 bit 933 MHz BGA-96 128 M x 16 20 ns 1.283 V 1.45 V - 40 C + 95 C IS43TR16128DL Reel, Cut Tape, MouseReel
ISSI DRAM 8G 512Mx16 1866MT/s 1.5V DDR3 I-Temp
5,247在途量
最少: 1
倍數: 1

SDRAM - DDR3 8 Gbit 16 bit 933 MHz FBGA-96 512 M x 16 20 ns 1.425 V 1.575 V - 40 C + 95 C IS43TR16512B Tray
ISSI DRAM DDR3 8G 1.5V 512Mx16 1600MT/s IT
2,480在途量
最少: 1
倍數: 1

SDRAM - DDR3 8 Gbit 16 bit 800 MHz FBGA-96 512 M x 16 20 ns 1.425 V 1.575 V - 40 C + 95 C IS43TR16512B
ISSI DRAM 8G 512Mx16 1866MT/s 1.35V DDR3L I-Temp
3,944預期2027/11/12
最少: 1
倍數: 1

SDRAM - DDR3L 8 Gbit 16 bit 933 MHz FBGA-96 512 M x 16 20 ns 1.283 V 1.45 V - 40 C + 95 C IS43TR16512BL Tray
ISSI DRAM Automotive (Tc: -40 to +105C), 4G, 1.5V, DDR4, 256Mx16, 2400MT/s at 16-16-16, 96 ball BGA (7.5mm x13.5mm) RoHS
4,973在途量
最少: 1
倍數: 1

SDRAM - DDR4 4 Gbit 16 bit 1.2 GHz FBGA-96 256 M x 16 19 ns 1.14 V 1.26 V - 40 C + 105 C
ISSI DRAM Automotive (Tc: -40 to +105C), 4G, 1.5V, DDR3, 256Mx16, 1600MT/s at 11-11-11, 96 ball BGA (9mm x13mm) RoHS
5,130在途量
最少: 1
倍數: 1

SDRAM - DDR3 4 Gbit 16 bit 800 MHz BGA-96 256 M x 16 1.425 V 1.575 V - 40 C + 105 C IS46TR16256B
ISSI DRAM Automotive (Tc: -40 to +105C), 4G, 1.35V, DDR3L, 256Mx16, 1600MT/s at 11-11-11, 96 ball BGA (9mm x 13mm) RoHS
5,686在途量
最少: 1
倍數: 1

SDRAM - DDR3L 4 Gbit 16 bit 800 MHz BGA-96 256 M x 16 20 ns 1.283 V 1.45 V - 40 C + 105 C IS46TR16256BL
ISSI DRAM 1G (64Mx16) 333MHz 1.8v DDR2 SDRAM
5,727在途量
最少: 1
倍數: 1

SDRAM - DDR2 1 Gbit 16 bit 333 MHz BGA-84 64 M x 16 450 ps 1.7 V 1.9 V - 40 C + 85 C IS43DR16640B Tray
ISSI DRAM 256M, 3.3V, SDRAM 16Mx16, 166MHz
5,832在途量
最少: 1
倍數: 1

SDRAM 256 Mbit 16 bit 166 MHz TSOP-II-54 1 M x 16 6 ns 3 V 3.6 V 0 C + 70 C IS42S16160J Tray
ISSI DRAM 256M, 3.3V, SDRAM 16Mx16 143MHz
4,858在途量
最少: 1
倍數: 1

SDRAM 16 Mbit 16 bit 143 MHz TSOP-II-54 1 M x 16 6 ns 3 V 3.6 V 0 C + 70 C IS42S16160J
ISSI DRAM 256M, 3.3V, SDRAM 16Mx16 143MHz
4,752在途量
最少: 1
倍數: 1

SDRAM 16 Mbit 16 bit 143 MHz TSOP-II-54 1 M x 16 6 ns 3 V 3.6 V - 40 C + 85 C IS42S16160J
ISSI DRAM 64M, 3.3V, SDRAM, 4Mx16, 143Mhz, 54 pin TSOP II RoHS
9,288在途量
最少: 1
倍數: 1

SDRAM 64 Mbit 16 bit 143 MHz TSOP-II-54 4 M x 16 5.4 ns 3 V 3.6 V 0 C + 70 C
ISSI DRAM 128M, 3.3V, SDRAM, 8Mx16, 166Mhz, 54 ball BGA (8mmx8mm) ROHS, IT
4,662在途量
最少: 1
倍數: 1

SDRAM 128 Mbit 8 bit/16 bit 166 MHz BGA-54 16 M x 8/8 M x 16 6.5 ns 3 V 3.6 V - 40 C + 85 C